Choose the values of RD, Rs, and R, for the JFET amplifier circuit of Fig. 3-11 that will result in a gain of 18.062 dB. Assume that Ipss = 8 mA, Vp = -4 V, rd≈ 002, VDQ/VDD = 0.375, and IDOIDSS=0.25. Calculate A = V/V, and sketch V₂. VDD +16V RD Rsig Cc 1μF 10μF + V₁ 1kQ Rs VSS-IV 50Sin(27x10³)t mV Fig. 3-11 RL

Choose the values of RD, Rs, and R, for the JFET amplifier circuit of Fig. 3-11 that will result in a gain of 18.062 dB. Assume that Ipss = 8 mA, Vp = -4 V, rd≈ 002, VDQ/VDD = 0.375, and IDOIDSS=0.25. Calculate A = V/V, and sketch V₂. VDD +16V RD Rsig Cc 1μF 10μF + V₁ 1kQ Rs VSS-IV 50Sin(27x10³)t mV Fig. 3-11 RL

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Data sheet below shows design parameters for a Common Source FET Transistor amplifier.VDD = 12V , VD = 0.75 VDD , VG = 0.5 VDD , Cin = Cout = 5muF , K = 1mAV-2 , VTN = 1V , R2 = 10k and ID = 2mA Q. At DC condition,design the circuit by calculating values for VG,R1,RD,VGS,RS and gm of the FET amplifier (show all the calculated steps involved). Propose and draw the DC circuit from the calculated values.
Given a certain common-source JFET amplifier in the laboratory, RD = 1 KΩ, RS = 560 Ω, VDD = 10 V and gm = 4500 uS. If the source resistor is completely bypassed, what is the voltage gain? _________- (hint: the voltage gain is the product of total AC load resistance and transconductance. Getting the total AC load resistance is equal to the parallel of load resistance and RD for loaded circuit)."
Use BJT transistor to design an amplifier circuit that operates in the frequency range 10kHz-100kHz. Verify your design by simulating the design using the circuitmaker or multisim software. Use the standard resistor values (10% tolerance). The design should meet the following criteria: 1. Good stabilization of the Q-point 2. VCEQ is around ½ VCC. 3. High voltage and Current gain. From your design and simulation results, determine the following: a. β of the transistor b. VCEQ c. The voltage gain (AV) Please provide us with your simulation file and a report about your results
Differential amplifier circuit with resistive load topology and the current source, ISS is 0.2mA. Assume the circuit is symmetrical in which (W/L)1 = (W/L)2 =25/0.5 and μnCox = 50 μA/V2. i)Please evaluate the transconductance, gm and differential small-signal voltage gain, Av. Then, if the aspect ratio (W/L)2 = 2(W/L)1, investigate the effect on the transconductance of transistors M1 and M2. ii)Prove that gm2 = 2gm1.
What are Aυ, Ai , Rin, Rout, and the maximum value of the source voltage for the amplifier shown if RI = 5 kΩ, R1 = 1 kΩ, RG = 10 MΩ, R3 = 36 kΩ, RD = 1.8 kΩ, VDD = 18 V? Use IDSS = 10 mA and VP = −5 V.
A common emitter amplifier as shown in Figure Q2 has the following parameters, β = 100, R1= 33K, R2 = 10K, RC = 3K3, RE = 1K, ro =  and VBE = 0.7 V.State all assumptions made.i. Check whether βRE>>10R2 is satisfiedii. Use the appropriate approach of analysis to determine the Quiescent point; IBQ,ICQ and VCEQ.iii. Draw the small signal equivalent circuit. Determine input impedance, Zin, outputimpedance, Zout, and the voltage gain, AV, if RL=20kΩ.
In the circuit in the figure, Vcc = 18 V and RL = 2.2 kΩ, while C1 = C2 = CE = 0.1 μF. It is also known that for parasitic and wiring capacitors, Cwi = 15 pF, Cwo = 21 pF, Cbc = 27 pF, Cbe = 887 pF and Cce = 25 pF. Accordingly, what is the bandwidth of the system? NOTE-1: The output impedance of the transistor r0 will be neglected in the calculations. NOTE-2: The high frequency dependence of hfe, β, will be neglected.
I - Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGS=5V , VDD=12V ( gm=4500μS ).II - A JFET datasheet gives VGS(OFF) = -4V and IDSS = 5 mA. Determine the values of ID for VGS from 0 V to -5V in 1V steps. Plot the transfer curve from these data on a graph sheet.
What are the unity-gain frequency and slew rate of the bipolar amplifier as shown if I1 = 100 μA, I2 = 400 μA, and CC = 10 pF? (b) If I1 = 300 μA, I2 = 350 μA, and CC = 10 pF?
Helping tags: Electrical Engineering . . . WILL UPVOTE, just pls help me answer the question and show complete solutions. Thanks. . . . Find Rb, Ibq, Icq, Vre, Vrc , Vc , Vrb, Vb, Zb, Zin and Zo for the CE amplifier shown in fig.1 Remember Icmax = Vcc/Rc+Re Graph the DC loadline showing the Q point of the circuit
Draw the dc equivalent circuit and find the Q-point for the amplifier shown. Assume VDD = 17.5 V, Kn = 225 μA/V2, VT N = −3 V, RG = 2.2 MΩ, RD = 8.2 kΩ, RI = 10 kΩ, and R3 = 220 kΩ.
Given the transformer-coupled cascaded bjt amplifier circuit Determine: a. Av2=Vc2/Vb2 b. Av1=Vc1/Vb1 c. Vo if Vs=0.5mVp-p d. Ais=Io/Is