Consider a germanium pn-junction at 450 K with its n-region is doped with impurity concentration of 2.5 × 1017 cm-³. The built-in potential barrier of the pn-junction is 0.675 V. Determine the required p-region doping concentration. Given the coefficient of Ge material, bandgap energy and Boltzmann constant is 1.66 × 1015 cm-³K-3/2. 0.66 eV and 86 × 10-6 eV/K respectively. Assume that, Vr = kT /e. %3D

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Consider a germanium pn-junction at 450 K with its n-region is doped with impurity
concentration of 2.5 × 1017 cm-3. The built-in potential barrier of the pn-junetion is
0.675 V. Determine the required p-region doping concentration. Given the coefficient
of Ge material, bandgap energy and Boltzmann constant is 1.66 × 1015 cm-³K-3/2.
0.66 eV and 86 x 10-6 eV/K respectively. Assume that, Vr = kT /e.
Transcribed Image Text:Consider a germanium pn-junction at 450 K with its n-region is doped with impurity concentration of 2.5 × 1017 cm-3. The built-in potential barrier of the pn-junetion is 0.675 V. Determine the required p-region doping concentration. Given the coefficient of Ge material, bandgap energy and Boltzmann constant is 1.66 × 1015 cm-³K-3/2. 0.66 eV and 86 x 10-6 eV/K respectively. Assume that, Vr = kT /e.
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