Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is 1020 cm-3 and the doping concentration in the p region is 101°cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, = 1.5 x 1010 cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is 1020 cm-3 and the doping concentration in the p region is 101°cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, = 1.5 x 1010 cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 5P

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