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(mA) Vas=+8 V 10 9 Vas=+7 V 7 Ves=+6 V Vas=+5 V Ves=+4 V 1 Ves=+3 V Vas=+2 V 5 10 15 20 25 Vps (V) Figure -1 Drain characteristics of a FET device is given in Figure-1; a) Define the type of the possible FET device having these characteristics, sketch the transfer characteristics directly from the drain characteristics, and what can be possible cut-off for V GS and saturation value for I from the drain characteristics b) Calculate and sketch the transfer characteristics by using Shockley's equation, compare the results in the transfer characteristics in possible cut-off for V and saturation value for I and GS Shockley's equation. Calculate and plot a load line c) Define a Q point from your calculations, define Io and V values from the transfer GSQ characteristic curve and load line, design and plot a proper voltage divider biasing circuit from your calculations above, calculate and define all the required peripheral components values and source voltage for your biasing circuit design.

(mA) Vas=+8 V 10 9 Vas=+7 V 7 Ves=+6 V Vas=+5 V Ves=+4 V 1 Ves=+3 V Vas=+2 V 5 10 15 20 25 Vps (V) Figure -1 Drain characteristics of a FET device is given in Figure-1; a) Define the type of the possible FET device having these characteristics, sketch the transfer characteristics directly from the drain characteristics, and what can be possible cut-off for V GS and saturation value for I from the drain characteristics b) Calculate and sketch the transfer characteristics by using Shockley's equation, compare the results in the transfer characteristics in possible cut-off for V and saturation value for I and GS Shockley's equation. Calculate and plot a load line c) Define a Q point from your calculations, define Io and V values from the transfer GSQ characteristic curve and load line, design and plot a proper voltage divider biasing circuit from your calculations above, calculate and define all the required peripheral components values and source voltage for your biasing circuit design.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Please explain the question step by step and please care to explain the question in detailed with your own sentence and explain why you used that formula, calculations etc. Thanks in advance.

(mA) Vas=+8 V 10 9 Vas=+7 V 7 Ves=+6 V Vas=+5 V Ves=+4 V 1 Ves=+3 V Vas=+2 V 5 10 15 20 25 Vps (V) Figure -1 Drain characteristics of a FET device is given in Figure-1; a) Define the type of the possible FET device having these characteristics, sketch the transfer characteristics directly from the drain characteristics, and what can be possible cut-off for V GS and saturation value for I from the drain characteristics b) Calculate and sketch the transfer characteristics by using Shockley's equation, compare the results in the transfer characteristics in possible cut-off for V and saturation value for I and GS Shockley's equation. Calculate and plot a load line c) Define a Q point from your calculations, define Io and V values from the transfer GSQ characteristic curve and load line, design and plot a proper voltage divider biasing circuit from your calculations above, calculate and define all the required peripheral components values and source voltage for your biasing circuit design.
Transcribed Image Text:(mA) Vas=+8 V 10 9 Vas=+7 V 7 Ves=+6 V Vas=+5 V Ves=+4 V 1 Ves=+3 V Vas=+2 V 5 10 15 20 25 Vps (V) Figure -1 Drain characteristics of a FET device is given in Figure-1; a) Define the type of the possible FET device having these characteristics, sketch the transfer characteristics directly from the drain characteristics, and what can be possible cut-off for V GS and saturation value for I from the drain characteristics b) Calculate and sketch the transfer characteristics by using Shockley's equation, compare the results in the transfer characteristics in possible cut-off for V and saturation value for I and GS Shockley's equation. Calculate and plot a load line c) Define a Q point from your calculations, define Io and V values from the transfer GSQ characteristic curve and load line, design and plot a proper voltage divider biasing circuit from your calculations above, calculate and define all the required peripheral components values and source voltage for your biasing circuit design.
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