Table 1 is the physical properties of intrinsic GaAs at 27°C (300 K). Assume that the bandenergy gap, E, of GaAs is 0.67 eV; Boltzmann’s constant, k = 8.62 × 105 eV/K.(b)Table 1Physical PropertiesIntrinsic GaAsElectron mobility, He0.720 m²/(V. s)Hole mobility, Hn0.020 m²/(V.s)Intrinsic carrier concentration, n¡1.4 × 1012 m3(i)Calculate the electrical conductivity of intrinsic GaAs at 125°C (398 K).(ii)Explain why the electrical conductivity of intrinsic GaAs increases with increasingtemperature.

The answer to the following question is-

Electron mobility, He 0.720 m²/(V. s) Hole mobility, µHn 0.020 m²/(V.s) Intrinsic carrier concentration, nị 1.4 x 1012 m³ (i) Calculate the electrical conductivity of intrinsic GaAs at 125°C (398 K). (ii) Explain why the electrical conductivity of intrinsic GaAs increases with increasing temperature.

Electron mobility, He 0.720 m²/(V. s) Hole mobility, µHn 0.020 m²/(V.s) Intrinsic carrier concentration, nị 1.4 x 1012 m³ (i) Calculate the electrical conductivity of intrinsic GaAs at 125°C (398 K). (ii) Explain why the electrical conductivity of intrinsic GaAs increases with increasing temperature.

Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter2: Electrical Components And Circuits

Section: Chapter Questions

Problem 2.10QAP

See similar textbooks

Similar questions

1) For a crystalline substance with a hexagonal unit cell, the distance interplanar d is given by the expression. Consider graphite, for which a = 0.247 nm and c = 0.679 nm. On a standardized diffractogram with Cu Kα radiation ((λ = 1.5418 Å)), where angle 2θ will be observed the Bragg 002 peak of graphite?
Assuming that the density of silica gel is 2.65 g cm-3 and that the silica particle are spherical with an average radius of 5 x 10-6 cm, calculate the estimated surface area Sest. Why is there such a large difference between S and Sest?
Can nitrogen fit into the octahedral interstitial site in BCC iron? Justify your answer by calculation. Atomic radius of nitrogen is 0.071nm and lattice parameter of BCC iron is 0.2866 nm
Using a simple infinite barrier approximation, calculate the “effective bandgap” of a 10 nm GaAs/AlGaAs quantum well grown along [001] direction. If there is a one-monolayer fluctuation in the well size, how much will the effective bandgap change? This example gives an idea of how stringent the control has to be in order to exploit heterostructures.
Using the virtual crystal approximation, up to what Al composition does the alloy AlxGa1-xAs becomesan indirect gap semiconductor?
6.1) At the composition of 0.77% by weight C, identify the phase(s) presentat 950 degrees C 6.2) When the specimen is at 950 degrees C, what is the maximum C composition at which a single phase Austenite is stable?6.3) If we slowly cool a Fe-C alloy with 0.77% by weight C, austenitized at950 degrees C, to just below the eutectoid temperature of 727 degrees C, give the weight percentage and composition of the phases present based on the phase diagram given above6.4) If we cool very quickly a Fe-C alloy with 0.77% by weight C,austenitized at 950 degrees C, to room temperature, give the weight percentage and composition of the phase(s) present
Rationalise what adding Na2O (a network modifier) to B2O3 does to the structure of the glass. Begin by sketching the influence of Na(+) and O(2-) on the SRO of the glass to predict the observed changes to MRO and associated bulk properties. If you like, comment on the changes to the dynamics (eg. vibrations) in the glass after modification.
Calculate the thermal expansion coefficient, α = (∂V/∂T)p/V, of diamond given that the (111) reflection shifts from 22.0403° to 21.9664° on heating a crystal from 100 K to 300 K and 154.0562 pm X-rays are used.
The purification of hydrogen gas is possible by diffusion through a thin palladium sheet. Calculate the number of kilograms of hydrogen that pass per hour through a 2.8 mm thick sheet of palladium having and area of 0.72 m^2 at 500 C. Assume a diffusion coefficient of 7.8 x 10^-8 m^2/s, that the concentrations at the high- and low- pressure sides of the plates are 3.4 and 0.58 kg/m^3 of hydrogen per cubic meter of palladium, and that steady-state conditions have been attained.
Calculate the planer density of planes (0:-1:-1) for BCC, and FCC crystal structures?
(a) A silicon sample maintained at T = 300 K is uniformly doped with Nd = 1016cm-3 donors. Calculate the resistivity of the sample.
Calculate the radius ratio of ZnO and AgI and predict its crystalline latice.