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- For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width ϗ(kai)DT (μm) when the surface is inverted.For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and ϗ=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobilityof the semiconductor sample.
- A cathodic protection system is to be designed for a 600 m long and 110 mm diameter buried pipeline coated with fusion bonded epoxy (FBE). The current density required for FBE coated structures is 0.18 mA/m^2. It is required to use horizontal anodes 8 ft. below the ground with 15 ft. spacing. The anode material available is high silicon-cast iron with a consumption rate of 0.5 kg/A-yr. The diameter and length of anodes are 30 cm and 300 cm respeqtively. The weight of each anode is 50 kg. Anode to soil resistance is measured to be 0.24 ohm. The soil resistivity is 2,500 ohm-cm. It is aimed to protect the structure for a period of 22 years. In order to design this CP system, determine, (a) Current required (A) (b) Total number of anodes (c) Total resistance (d) The potential (E) for protection (e) Total power required for this CP system.True or false a.A p-n junction has a variable capacitance depending on bias. b.n a depletion mode MOSFET the channel is created by implantation of ions not gate bias. c.Diffusion capacitance is zero if the diode length is longer than the diffusion length. d.We can accurately predict the energy and time of an electron. e.. Avalanche breakdown occurs if the potential barrier is narrow, allowing for tunneling of carriers f.For an Schottky contact there is a higher concentration of majority carriers at the interface g.Current can flow between source and drain with a gate bias, VG=0 in an enhancement modeMOSFET. h.To achieve forward active mode in an NPN bipolar junction transistor, the base-emitter voltage must be forward biased and the base-collector voltage must be reverse biased to ensure that electrons from the emitter make it to the collector. i.The Early Effect causes a decrease in IC with increased VC as the depletion region from the collector extends significantly into the baseAn abrupt Si PN junction at 300 K is characterized by ND = 1016 cm-3 and NA = 2.5 x 1015 cm-3. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V.
- An abrupt silicon junction of area 0.003 cm2 has the following parameters: ND = 2 * 10^18 cm-3 (n-side) and NA = 2 * 10^16cm-3 (p-side)a) Calculate the difference between the Fermi level and the intrinsic Fermi level onboth sides.b) Calculate the built-in potential at the junction in equilibrium and the depletionwidth.c) Draw and label the band diagram.d) Determine the total number of exposed accepters in the depletion region.A rectangular cathode with the dimensions width = 2.6 mm and length = 30 mm glows at a temperature of 1800K in a vacuum tube. The work function of the cathode is = 2.5 eV and the emission constant is 3E4 . What is the maximum (saturation) current that can be extracted from this cathode? Hint: If you use the Boltzmann constant in eV enter at least 5 significant digits (i.e. use 8.6174E-5 ) State the current in Amp units.A pn junction operating in this forward-bias region with a current I of 0.4 mA is found to have a diffusion capacitance of 1 pF. What diffusion capacitance do you expect this junction to have at I = 0.1 mA? What is the mean transit time for this junction?
- Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.A ceramic capacitor is to be constructed to have a capacitance of 0.01µF and to have a steady working potential of 2.5 kV maximum. Allowing a safe value of field stress of 10 MV/m, determine (a) the required thickness of the ceramic dielectric, (b) the area of plate required if the relative permittivity of the ceramic is 10, and (c) the maximum energy stored by the capacitor.Question 2: The Fermi energy level for a particular material at T = 300 K is 5.50 eV. The electrons in this material follow the Fermi-Dirac distribution function. a) Find the probability of an energy level at 5.50 eV being occupied by an electron. b) Repeat part (a) if the temperature is increased to T = 600 K. (Assume that EF is a constant.). c) Calculate the energy level where probability of finding an electron at room temperature is 70%. d) Calculate the temperature at which there is a 7 percent probability that a state 0.4 eV below the Fermi level will be empty of an electron. Please use formula below