Answered: For increasing temperature, how will…

For increasing temperature, how will the resistivity of the following materials change, and why: Calcium (Ca) Semiconductive Silicon (Si) Silicon Dioxide (SiO2) Polyethylene

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter13: Heating Control Devices

Section: Chapter Questions

Problem 26RQ

See similar textbooks

Related questions

Q: Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of…

A: (a) The mass density is given in the question. To calculate electron density we will find number of…

Q: What are the economic impacts of corrosion? Give measures to prevent corrosion of metals. (Will be…

A: What are the economic impacts of corrosion? Give measures to prevent corrosion of metals.

Q: Q5) (a) Silicon is doped by adding As atoms to a level of 5 x 1015 As atoms/cm³. Calculate: (i) the…

A: The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

Q: Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine…

A: Q3

Q: The technique for measuring specific heat that involves heating a material, adding it to a sample of…

A: The correct answer is d.

Q: Example (3-2): Calculate the conductivity of an intrinsic silicon crystal if the number of released…

Q: Q2/ Pure silicon was doped with arsenic atoms As with a density of m3/1020 6. What is the density of…

A: We need to calculate electrons and holes concentration for given semiconductor .

Q: 1- A rod of intrinsic silicon of 2 cm long, 0.5mm in diameter, motilities ue = 0.12 m2/V.s and Hn =…

A: The conductivity of intrinsic silicon depends on the mobility of the electrons and holes.

Q: 3.4 A uniform bar of n-type silicon of 2 um length has a voltage of 1 V applied across it. If Np=…

A: Given Data: Nd = 1016 V = 1 V d = 2 um un = 1350

Q: One of the following statements is correct regarding the photo-diode: Select one: a. The internal…

A: We need to tell that which one of the following statement is correct regarding the photo-diode: a.…

Q: 2 K + D₁ + 1 K Vo Vi D₂ A 2.6 V Diodes D1 and D2 are Silicon with forward voltages of 0.7 volts. v,…

A: Given circuit: Diodes D1 and D2 are of Si with forward bias voltage of 0.7 V.

Q: Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of…

A: (a) The mass per cm3 is given. We will first find number of moles, then number of atoms and then…

Q: An impurity such as antimony (Sb) has five electrons in its outer shell. When there are Sb…

A: Antimony has five electrons in its outer shell when there are Sb impurities in Silicon. Four…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: Here i have found the value of electron and hole concentration in an n type and p type si…

Q: particular silicon semiconductor device requires an n-type semiconductor at 300 K with a resistivity…

A: Given data: Resistivity = 0.1 Ω-cm μn=695 cm2/(V-s) Solution: The conductivity of the device is…

Q: Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine…

Q: Compute the mobility of the free clectrons in aluminum (AL) for which the density is 2.70 x 10'…

A: According to the question we have to find the value of mobility.

Q: Q1: A conductive wire has a resistivity of (0.649×10-8(Q.m):) at room temperature are (5.8×10*)…

Q: Q(a): Find the resistivity of intrinsic silicon using following values - u, = 1350cm2/V.s, H, =…

A: Find the resistivity of the intrinsic silicon Conductivity = ni e(un +up) Resistivity…

Q: A specimen of pure silicon at 300 k° has a density o: charge carriers 2.5 ×1019 /m³. It is doped…

Q: Q2A/ A metal object with length 10cm and area 5mm and resistance of it .340. A potential voltage of…

Q: A piece of crystalline silicon is doped uniformly with phosphorus atoms. The doping density is 1016…

A: Given data, Silicon is doped uniformly with the phosphorous atom. The doping density, The intrinsic…

Q: Find the concentration o electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: I have found the value of electron and hole concentration in n type and p type semiconductor.

Q: An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity…

A: Referring to the question, Silicon(Si) is doped with the phosphorous(P). Charge carrier…

Q: (1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m²/v-s…

Q: 1. A multijunction solar cell will be created using the following three semiconductors. Place each…

A: Multi Junction Solar Cell: Solar cells having several p–n junctions constructed of various…

Q: Choose the correct answer: 1- Within the PN-junction, one of the following is not moving: A)…

A: As per Bartleby guidelines we are allowed to solve only three subparts,please ask the rest again.

Q: An n-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity…

Q: Calculate the mass of Li formed by electrolysis of molten LiCl by a current 7871 A flowing for a…

Q: Electrons in silicon have a mobility of 1000 cm / V - sec. The electric field is applied to make the…

A: According to the equation of the mobility:

Q: An n-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity…

A: Given, A n-type piece of Si experiences An electric field E=0.2 V/μm Mobility, μn=1350 cm2/Vsμp=480…

Q: Determine the doubling temperature for list of semiconductor material shown in the table below.…

A: Ans (a) Band energy gap of silicon at 273K Eg = Eg0 - βT -----1) 1.11 = 1.21 - 3.6×10-4T T = 1.21…

Q: a) n-type and p-type semiconductor materials b) donor and acceptor impurities c) majority and…

Q: 4 A uniform bar of n-type silicon of 2 um length has a voltage of 1 V applied across it. If N,=…

Q: -'If the resistivity of pure silicon is 2300 (0. m) and assuming that the valance electrons of…

Q: Hall coefficient of a specimen of depend silicon found to be 3.66×104m³/C. The resistivity of the…

A: Given, Hall coefficient, RH=3.66×10-4 m3C Resistivity, ρ=8.93×10-3 Ωm Charge of electron,…

Q: A copper wire has a diameter of 2.05 mm and carries a current of 15 A due solely toelectrons. (These…

A: Diameter of copper wire is d = 2.05 mm So, radius of copper wire is;

Q: Hall coefficient of a specimen of depend silicon found to be 3.66x104 The resistivity of the…

A: In this question we will find mobility and density of charge carriers...

Q: Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of…

Q: 4. The minority carrier life-time of electrons in a certain semiconductor is 9x10s. The electron…

A: Calculating Dn

Q: 1.what are your comments on the future R&D directions for further improvement of NMH batteries? 2.…

A: We are authorized to answer one question at a time, since you have not mentioned which question you…

Q: 2 K + D₁ + 1 K Vo Vi D₂ 2.6 V 0 Diodes D1 and D2 are Silicon with forward voltages of 0.7 volts. v.…

Q: Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of…

Q: 3.4 A unifom bar of n-type silicon of 2 µm length has a voltage of 1 V applied across it. If =…

A: Given values are -

Q: Calculate the threshold voltage shift if charge density is Qit=1011 cm-2 and the oxide thickness is…

Q: semiconductor is a crystalline material. Please choose one: a. have strong covalent bonds between…

A: In this question we need to choose a correct option

Q: Q4/ Find the conductivity of Si that is doped with 2 parts per 10° of donor impurity. Given that…

A: Given: Number of Si atoms per m3=5×1028 μn=0.13 m2V-secμp=0.05 m2V-sec To find: The conductivity of…

Q: Q1: A conductive wire has a resistivity of (0.649x10-8(2.m)) at room temperature are (5.8x10»)…

Concept explainers

Thermocouple

A thermocouple is a temperature measurement device. It includes diverse metal wires which are joined collectively to form a joint. At the same time as the junction is hot or cold, a small voltage is generated inside the measuring thermocouple electrical circuit, which corresponds to the temperature.

Question

For increasing temperature, how will the resistivity of the following materials change, and why:
1. Calcium (Ca)

Semiconductive Silicon (Si)

Silicon Dioxide (SiO₂)

Polyethylene

Expert Solution

Step 1

Resistivity and the temperature are linear functions , As the temperature increases resistivity of the conductors increases where as for semiconductors resistivity decreases with the increase of temperature.

Step by step

Solved in 2 steps

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

Semiconductors are ____________. conductors insulators half conductors none of the above
A barium titanate crystal has a thickness of 2 mm. Its voltage sensitivity is 12*10-3 Vm/N. It is subjected to a pressure of 0.5 MN/m2. What is the voltage generated ? (Hand written not allowed)
Choose the correct option. 1) Semiconductor materials havea) Positive temperature coefficientb) Negative temperature coefficientc) Unpolar temperature coefficientd) has both negative and positive coefficient but depends upon the conditions 2) The temperature coefficient is a a) Device temperatureb) Rise and fall of a temperaturec) Conductivity of a deviced) Rise and fall of conductivity with temperature 3) Electronic and Electrical devices area) Different in nature, principle, weight and power consumptionb) Electronics is a subfield of Electricalc) Works at different voltage levelsd) All of the above 4) Zener diode conducts ina) Forward regionb) Reverse regionc) Both forward and reverse regionsd) None of the above 5) Multisim is a simulation software that has a code for each electrical device it has.a) Trueb) False 6) A solar panel is also the application of a diodea) Trueb) False 7) Forward biasing causes current which is due to thea) minority carriesb) majority carriersc) Both…
If V1 = 22 V, V2 = -7 V, R1 = 1.2 kOhm, R2 = 4.7 kOhm, R3 = 2.4 kOhm, and all diodes are silicon for the circuit below, the output voltage Vo is equal to ___ V. No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.
The pure silicon mold given on the side is doped with 10 ^ 18cm ^ -3 phosphorus atoms. When the electrical field is applied to the silicon mold, the resulting flux density is 500A / cm ^ 2. The resistance of the silicon cup was measured as 50 ohms. The ability to move electrons is 1200cm ^ 2 / etc. The ability to characterize holes is 400cm ^ 2 / etc. accordingly, what is the length of the silicon container.
A piece of crystalline silicon is doped uniformly with phosphorus atoms. The doping density is 1,000,000,000,000,000 atoms per cubic centimeter. Determine the free electron density in this material at 27°C. n = _____ electrons/cm^3 Round your answer to 0 decimal places.
Which of the following materials are used in PV cells ? a. Paper b. None of these c. Semiconductors d. Wood
The technique for measuring specific heat that involves heating a material, adding it to a sample of water, and recording the final temperature* a. conductivity b. calorimeter c. energy conservation d. calorimetry
QI] Electrons in silicon have a mobility of 1000 cm /V-sec. The electric field is applied to make the electrons reach a velocity of 3 x 10' cm/sec. Assume that the mobility is constant and independent of the electric field. What voltage is required to obtain this field in a 5 um thick region? How much time do the electrons need to cross the 5 um thick region?
Choose the correct option 1. The temperature coefficient is a a) device temperature b) rise and fall of a temperture c) conductivity of a device d) raise and fall of conductivity with temperature 2. Electronic and electrical device are a) different in nature, principle,weight and power consumption b) electronics is a subfield of electrical c) work at different voltage level d) all of the above 3. zener diode conduct in a) forward region b) reverse region c) both farward and reverse region d) none of the above 4. Multisim is a simulation software thet has a code for each electrical device it has a) True b) False 5. A solar panel is also the application of a diode a) True b) False 6. Farward biasing causes current which is due to the a) minority carries b) majority carries c) both majority and minority carries d) none of these 7. A diode acts as a linear device up to 0.7 volts a) True b)…
A sample of wire (1 mm in diameter by 1 m in diameter) length) of an aluminum alloy (containing 1.2% Mn) is placed in an electrical circuit, as shown in the figure next to. A voltage drop of 432 mV is measured at wire length when it carries a 10 A current. Calculate the conductivity of this alloy.
Calculate the threshold voltage shift if charge density is Qit=1011 cm-2 and the oxide thickness is 1000Å. A silicon wafer is oxidized at 1200°C for 1 hr. Calculate thickness of the obtained oxide. How much longer it should be oxidized to grow 0.1µm oxide in the same temperature but in the wet ambient.