Question3: A uniform piece of n-type of silicon that is 1um long senses a voltage of 1 V.Determine the velocity of the electrons. Use u,=1350 cm?/V.sec

Answered: Image /qna-images/answer/3fb53062-487c-41cb-aef4-fdf97035dad4.jpg

Answered: Question3: A uniform piece of n-type of…

Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine the velocity of the electrons. Use u=1350 cm?/V.sec

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter2: Basic Electricity

Section: Chapter Questions

Problem 1RQ: All physical objects are composed of __________. a. substances b. matter c. neutrons d. ketons

See similar textbooks

Related questions

Q: Suppose you are asked to design a uniform wire from 1 g of copper

A: Given values are: Mass of Copper(m)=1g=1×10-3kgResistivity of Copperρ=1.72×10-8Ω-mResistance of…

Q: Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of…

A: (a) The mass density is given in the question. To calculate electron density we will find number of…

Q: Q5) (a) Silicon is doped by adding As atoms to a level of 5 x 1015 As atoms/cm³. Calculate: (i) the…

A: The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

Q: Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine…

A: Q3

Q: Complete the table of values for this circuit, representing all quantities in complex-number form:…

Q: Q3/ compute the require temperature in C° for put a sample of germanium in order to has energy gap…

Q: Q2/ Pure silicon was doped with arsenic atoms As with a density of m3/1020 6. What is the density of…

A: We need to calculate electrons and holes concentration for given semiconductor .

Q: Q2) A silicon crystal having a cross-sectional area of 0.001cm and a length of 10 cm is connected at…

A: According to guidelines we need to solve the value of resistivity and the conductivity with the help…

Q: Example: A specimen of silicon is (2 cm) long has a square cross- section (2x 2 mm). The current is…

Q: Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of…

A: (a) The mass per cm3 is given. We will first find number of moles, then number of atoms and then…

Q: oper wire of certain length and ance is drawn out to three times gth without change in volume, w…

Q: Q2: Calculate holes and electrons concentration in compensated silicon p-type sample. If T=300 K,…

Q: A two wires, one of Copper and the other of Nickel, if the resistance of the first is (12.7 0), and…

Q: Q(a): Find the resistivity of intrinsic silicon using following values - u, = 1350cm2/V.s, H, =…

A: Find the resistivity of the intrinsic silicon Conductivity = ni e(un +up) Resistivity…

Q: A specimen of pure silicon at 300 k° has a density o: charge carriers 2.5 ×1019 /m³. It is doped…

Q: Problems Q1: A bar of intrinsic silicon having a cross section area of 3x10 m² has an n=1.5x10m³. If…

Q: 3. Determine the thermal coefficient of resistance of copper at 50°C, then use this value to…

Q: The length and diameter of a copper wire are found to be 100 and 0.002 m, respectively, Consider…

Q: Q:- A current of (2 HA) passing through an intrinsic silicon bar has (3 mm) length and (50 x 100…

A: Given: Current, I=2 μA Length, L=3 mm Cross sectional area, A=50×100 μm2 Resistivity, ρ=2.3×105 Ω·cm…

Q: Q1/A type (n) semiconductor has a specific resistance of 10-22m 20 and electron mobility is 102…

Q: Q2: calculate the diffusion current density for a given semiconductor. Consider silicon at T=300k.…

A: Diffusion current density is given by Jn=qDn (dn/dx )

Q: For increasing temperature, how will the resistivity of the following materials change, and why:…

A: Resistivity and the temperature are linear functions , As the temperature increases resistivity of…

Q: An n-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity…

Q: Electrons in silicon have a mobility of 1000 cm / V - sec. The electric field is applied to make the…

A: According to the equation of the mobility:

Q: Consider the two devices shaun below which are fabricated from the semiconductor material. same i)…

A: In n type material, the excess charge carriers are electrons.In first device current doesn't flow if…

Q: Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine…

Q: (4) For the following materials, _is indirect bandgap semiconductor material; active region of…

A: According to the guideline we need to solve the only first question, According to the question have…

Q: A bar of silicon is 4 cm long with a circular cross section. If the resistance of the bar is 240 Q…

Q: An n-type piece of silicon experiences an electric field equal to 0.2 V/um. Calculate the velocity…

A: Given, A n-type piece of Si experiences An electric field E=0.2 V/μm Mobility, μn=1350 cm2/Vsμp=480…

Q: Suppose a doped semiconductor has 1 billion free electrons at room temperature. If the temperature…

A: If a semiconductor is doped with donar type impurities then no of electrons will be very higher than…

Q: Q4: - Find the value of R1 in the circuit shown below, assume Ip2 is twice Ipi. The diodes have…

A: Circuit diagram is given as, Resistance R2 is in parallel with Si diode therefore drop across R2 is…

Q: Q1] Electrons in silicon have a mobility of 1000 cm /V-sec. The electric field is applied to make…

Q: 10) If we increase the temperature of the semiconductor beyond Ok, then how many particles will be…

Q: -'If the resistivity of pure silicon is 2300 (0. m) and assuming that the valance electrons of…

Q: Hall coefficient of a specimen of depend silicon found to be 3.66×104m³/C. The resistivity of the…

A: Given, Hall coefficient, RH=3.66×10-4 m3C Resistivity, ρ=8.93×10-3 Ωm Charge of electron,…

Q: The resistance of a long piece of copper wire is 48 2 at 20°C. a. What would the resistance be at…

A: Given: Resistance of a long copper wire = 48Ω at 200C To do: a) we have to determine the resistance…

Q: 4. The minority carrier life-time of electrons in a certain semiconductor is 9x10s. The electron…

A: Calculating Dn

Q: Using the idea of energy bands in solid materials, explain the characteristics of the following…

A: The useful way to see the difference between Conductor, Insulator and Semiconductor is to plot the…

Q: Example: A piece of silver wire has a resistance of 1 2. What will be the resistance of manganese…

Q: 3)The resistance of semiconductor decreases with increase in temperature Select one: True False

A: Given question is about the semiconductor resistance effect with temperature.

Q: Calculate the threshold voltage shift if charge density is Qit=1011 cm-2 and the oxide thickness is…

Q: Find the resistance of an aluminum wire that has a length of 1000 m and a diameter of 1.626 mm. The…

Q: Determine the resistance of a bus bar made of aluminum at 50°C if the length is 15 meters long and…

A: to determine the resistance of a bus bar made of aluminum at 50°C if the length is 15 meters long…

Q: Q:- A current of (2 pA) passing through an intrinsic silicon bar has (3 mm) length and (50 x 100…

Q: Find the resistance of an aluminunm wire that has a length of 1000 m and a diameter of 1.626 mm. The…

Q: Q4/ Find the conductivity of Si that is doped with 2 parts per 10° of donor impurity. Given that…

A: Given: Number of Si atoms per m3=5×1028 μn=0.13 m2V-secμp=0.05 m2V-sec To find: The conductivity of…

Q: specimen of silicon is 0-2mm 2ong und has ucress Section area of o o4 m m² one Voll im pressed…

A: When voltage is applied across an n-type silicon specimen, an electric field is developed inside it.…

Concept explainers

Solar Cell

A solar cell, or photovoltaic cell, is a device that converts light into electricity directly through a photovoltaic effect, i.e., a physical and chemical event. It is a type of electromagnetic cell, defined as being used for its electrical properties, current, voltage, or resistance, which vary when exposed to light. Everyday cellular gadgets are usually the building blocks of photovoltaic modules, collectively known as solar panels. Single junction silicon solar cell can generate an open circuit of about 0.5 to 0.6 volts.

Question

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

How many times smaller is an electron than a proton?
All physical objects are composed of __________. a. substances b. matter c. neutrons d. ketons
6. What is used to hold a sulfate ion together?
What is a proton? Where does it normally exist in an atom, and what is its charge?
QI] Electrons in silicon have a mobility of 1000 cm /V-sec. The electric field is applied to make the electrons reach a velocity of 3 x 10' cm/sec. Assume that the mobility is constant and independent of the electric field. What voltage is required to obtain this field in a 5 um thick region? How much time do the electrons need to cross the 5 um thick region?
Calculate the cross-sectional area, in mm2, of a piece of copper wire, 40 m in length and having a resistance of 0.25 ohm. Take the resistivity of copper as 0.02 × 10−6 ohm.
Calculate the threshold voltage shift if charge density is Qit=1011 cm-2 and the oxide thickness is 1000Å. A silicon wafer is oxidized at 1200°C for 1 hr. Calculate thickness of the obtained oxide. How much longer it should be oxidized to grow 0.1µm oxide in the same temperature but in the wet ambient.
Suppose you are asked to design auniform wire from 1 g of copperwhose resistivity is 1.72 × 10-8Ω ∙ ?. Ifthe wire is to have a resistance of 0.5 Ω, and all the copper given to you is to be used, what will be the length and diameter of the wire?What will be the length and diameter ofsuch wire, knowing that the densityof copper is 8960 kg/m3.
The pure silicon mold given on the side is doped with 10 ^ 18cm ^ -3 phosphorus atoms. When the electrical field is applied to the silicon mold, the resulting flux density is 500A / cm ^ 2. The resistance of the silicon cup was measured as 50 ohms. The ability to move electrons is 1200cm ^ 2 / etc. The ability to characterize holes is 400cm ^ 2 / etc. accordingly, what is the length of the silicon container.
The following are considered good resources of iron for higher absorption efficiency EXCPET for? A. Seafood B. Dark leafy green vegetables C. Beef D. Turkey
A metallic wire is stretched from original length of 2 m to 5 m. If the original cross-sectional area is 4 square millimeters and original resistance is 8 ohms, determine the new resistance (in ohms) of the metallic wire. Assume the volume of the wire is preserved.
A piece of silver wire has a resistance of 1 ohm. Determine the resistance of alead wire one-third the length and one-third the diameter if the resistivity of lead wire is 30 times that of silver. NOTE: Please explain where did you get the variables so I can understand them. Thank you