In a P-type germanium, n = 2x10" electrons/m' and the density of boron 4x102; atoms/m. The electrons and holes mobility are (0.4 and 0.2 m/ V. s) respectively. What is its conductivity before and after addition of boron atoms?

In a P-type germanium, n = 2x10" electrons/m' and the density of boron 4x102; atoms/m. The electrons and holes mobility are (0.4 and 0.2 m/ V. s) respectively. What is its conductivity before and after addition of boron atoms?

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Related questions

Q: find E for the sheet charge (ps) = 20p mC/m if p32, p=-2 Ø=0-27t %3D

Q: Density of state of copper The Density of state for copper 8.9 gm/cm^3 Q1)Find and explain: a-The…

A: Since there are multiple questions uploaded so solving the relevant questions accordingly and Kindly…

Q: (a) Ideally, a cylindrical wire with radius, p = 2.3 cm and length h = 155 cm (along az) has 50z0…

A: Given values are - ρ=2.3cm=0.023mh=155cm=1.55mρv=-50εoρCm3t=2×10-12secIm=50A

Q: Question 4-) The linear electron-concentration profile shown in the figure below has been…

A: The given electron concentration profile is shown below: It is given that: no=1017 /cm3W=4…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: Drift currentIdrift=σ E AIdrift=(ND q μn+NA q μp) E A A=1 mm2=10-6 m2 E=elcectric…

Q: -3 Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom…

A: The Al-SI bond create a holes and this hole act as a positive charge carrier. So the material…

Q: (ii) What is the origin of the positively charged holes in the valence band ? Are these positive…

A: Given : In the above question they are interested to know the generation of the positively…

Q: Calculate the resistivity at 280 K for a Si sample doped with 2.12×1013 atoms per m of boron atoms.…

A: Given, the acceptor doping concentration , NA=2.12×1013 /cm3 Mobility of electrons, μn=1.5 m2/Vs…

Q: A typical Cu wire might have 2 X 1021 free electrons in 1 cm of its length. Suppose that the drift…

A: Given that the wire has 2 x 1021 free electrons length = 1 cm drift velocity is 0.05 cm/s

Q: Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of…

Q: Compute the conductivity of the given material whose resistivity is ρ=1.724∗10−8Ωm area of…

Q: Q': choice the correct answer in each of the following 1. With rise in temperature the electrical…

A: As per Bartleby guidelines we are allowed to solve only three subparts,please ask the rest again.

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: Here i have found the value of electron and hole concentration in an n type and p type si…

Q: #6/ The atomic weight of hypothetical alloy is 77.4 g/mol, density is 8.22 g/cm³, and atomic radius…

A: Given - Atomic weight = 77.4 g/mol Density = 8.22 g/cm3 Atomic radius = 0.125 mm

Q: The potential at a point due to a charge of 100 micro coulomb at a distance of 9m will be

A: The potential at a point due to a charge at a distance of 9m ? Charge Q = 100 micro coulomb

Q: 5. Consider the energy diagrams for Si, Ge, and GaAs shown below (also in Slide 14 in Lecture 2.3…

A: Calculation of wavelengths for given energy diagrams of Si, Ge and GaAs : Enegy bandgap of Ge,…

Q: For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm2, and resistance of…

A: An intrinsic semiconductor will have equal electron and hole concentration. This concentration is…

Q: Rank in order, from largest to smallest, the electric field strengths En to Ec at points B and C. 2r…

Q: 9.A semiconducting crystal with 12 mm long, 5 mm wide and 1 mm thick has a magnetic density of 0.5…

A: 9. From the above question data is as follows: To find Hall coefficient:VH=37 μV=37×10-6 Vt=1…

Q: Find the concentration o electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: I have found the value of electron and hole concentration in n type and p type semiconductor.

Q: 5. A certain material has diffusion coefficients Dn = 32 cm?/s and Dp = 10 cm²/s. The free electron…

Q: 1. Pure germanium has (4 × 104) atom. cm doped by indium atoms, the impurity is add to the extent of…

A: Given that intrinsic concentration of Ge is 2.5*1013 cm-3. ni==2.5*1019 m-3. The mobility of…

Q: A Germanium semiconductor at 300k is doped with 2. 5*10^15 cm^-3 arsenic atoms and 1.8*10^15 cm^-3…

A: The arsenic atoms are 15th group element and boron is 13th group element. The arsenic atom will give…

Q: Neglecting losses and fringing effects and assuming the substrate of a stripline to have a thickness…

A: In this question we will find required width of metal strip in order for stripline to have given…

Q: The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density…

A: Given data, The value of maximum drift velocity is 107 cm/s. The value charge density is 0.4 C/cm3.…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

Q: The current density in a copper wire of radius 0.750 mm is uniform. The wire's length is 5.00 m, the…

A: Given values are - r=0.75mm=0.75×10-3mL=5mV=0.2VoltElectron densityn=8.10×1028m-3 Given that wire is…

Q: äbäi 15 Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

Q: Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity?…

A: Given T=300 K Boron is an acceptor type impurity so, NA=4×1018 /cm3ND≈0 /cm3 For p -type…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: Here i have derived the answer.

Q: 2. Total current in a semiconductor is constant and is composed of electron drift current and hole…

Q: In a n-type semiconductor, the electron concentration increases linearly along the x-axis from 10^16…

A: Given: In a n-type semiconductor, the electron concentration increases linearly along the x-axis…

Q: 5. In a P-type germanium, nį = 2.1 × 1019 m-³density of boran 4.5 x 1023 atoms /m³. The electron and…

A: (a) Calculate the conductivity before the addition of boron atoms.…

Q: 1. Pure germanium has (4 x 1022) atom. cm-3 doped by indium atoms, the impurity is add to the extent…

Q: 5. Determine the concentration of free electrons, concentration of holes in the material and the…

A: Brief description : Donor doping concentration = ND Acceptor doping concentration = NA ni :…

Q: The charge of a nucleus of Helium is equal to +3.2x10-19 C, and it is held in place. What is the…

A: First we will solve for electric potential ,Coulomb force and Potential Energy of the electron.

Q: mea (a) How does the above expression get modified if we assume that all the electrons have same…

A: Solution- we know, frequency dependent relative permittivity εrω = 1+Nq2mε0∑jfiω2j-ω2+iωYj a) we…

Q: (a) pure germanium has (3.6×10²!) atom.cm³, was doped by an indium atom, the impurity is added to…

A: Given : Density of germanium atom = 3.6 × 10²¹ atoms/ cm³ Doping of impurity atoms [ indium]…

Q: In the Electric Field Mapping experiment, you used two electrodes separated by a distance L and a…

A: An electric field mapping experiment is conducted to find the electric potential in space or in…

Q: 2. At temperatures near room temperature, the temperature dependence of the conductivity for…

A: At room temperature, the temperature dependence of the conductivity for the intrinsic germanium is…

Q: 3) A hypothetical metal that exhibits ferromagnetic behavior and has (i) a face centered cubic…

A: A hypothetical metal that exhibits ferromagnetic behavior having an atomic radius of 0.125 nm and a…

Q: 5.45 For intrinsic GaAs, the room-temperature electrical conductivity is 10-6 (ohm-m)-1, the…

A: According to the question we have to find the value of carrier concentration ni.

Q: The intrinsic resistivity of Germanium at room temperature is 0.47 Q-cm. The electron and hole…

A: Given parameters are: Intrinsic Resistivity of Germanium,ρ=0.47Ω-cm=0.47×10-2Ω-m Electron…

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: This the case of composite semiconductor means doping is done if both pentavalent atom (phosphorus)…

Q: Define the following: Ideal Dielectric - Polarization - Electric susceptibility - Dielectric…

A: Ideal dielectric :- An ideal dielectric is a material which has zero electrical conductivity. A…

Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

Q1. In a P-type germanium, n = 2x10" electrons/m' and the density of

boron 4x102; atoms/m. The electrons and holes mobility are (0.4 and 0.2 m/ V. s) respectively.

What is its conductivity before and after addition of boron atoms?

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Types of Semiconductor Material and Its Energy Band Analysis

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

What is a proton? Where does it normally exist in an atom, and what is its charge?
conducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A current of (5 mA) produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm²/V.Sec.).
Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.
Boron atoms are added to a Si film resulting in an impurity density of 4 × 10^16 cm^–3.(a) What is the conductivity type (N-type or P-type) of this film?(b) What are the equilibrium electron and hole densities at 300 K and 600 K?(c) Why does the mobile carrier concentration increase at high temperatures?(d) Where is the Fermi level located if T = 600 K?
Find the work done in moving a point charge Q = -20 μC from the origin to (4, 2, 0)m in the field
We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies linearly from 10E20 cm^-3 to 0 from left to right. If the mobility of the electrons is 500 cm^2/V.s, what is the current density if the electric fields are negligible?
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
Find the electric field (magnitude and direction) at the point P for the following 3-charge configuration, where Q= +1nC and a=2cm. Show detailed work and a free body diagram.
The electrons present in the valance band are loosely attached to the nucleus and have higher energy than the conduction band. Select one: True False
Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?
A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
Consider a two-dimensional crystal with rectangular shape, dimensions 10 um x 1 um, lattice spacing 0.15 nm (assume square lattice). What is the Fermi level assuming one electron per atom? What is the density of states as a function of electron energy?