-3 Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s. .S. Boltzmann Constant=1.38×1023 J/K = 8.62x10s eV/K Unit charge= 1.602 x10*C Planck's constant= 6.626×10 4 J.sec-D4.136×10 1 eV.sec -34

-3 Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s. .S. Boltzmann Constant=1.38×1023 J/K = 8.62x10s eV/K Unit charge= 1.602 x10*C Planck's constant= 6.626×10 4 J.sec-D4.136×10 1 eV.sec -34

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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