Please answer all questions C5 The interstitial diffusion coefficient for a small atom diffusing in a metal is usuallylarger than its diffusion coefficient via a vacancy mechanism.2)01(CTrue or False Answer 10 of 12 (1)C- HCP has an "ABAB" stacking sequence, FCC has an "ABCABC" stacking sequence.C Dislocations move most easily in a crvstal along the highest density planes along the3)lowest density direction.C) Phase diagrams give only equilibrium information about the stability of phases.There are 14 Bravais lattices, each of which belongs to one of the 7 crystal systems.4)6) C) Proeutectoid ferrite forms after pearlite in hypereutectoid steel.C5 Thermal expansion in crystalline materials is the result of an asymmetry in the repulsive7)and attractive force curves between pairs of atoms.-) A cored microstructure can develop in an allov cooled from the melt if the diffusion rateof the constituent atoms are too low.8)-JA screw dislocation can be thought of as an extra plane of atoms ending within the crystallattice.9)20) ) In long range order (LRO); the special atomic arrangement extends over much largerlength scales-<100 nm.1) C) Homogeneous nucleation occurs when the undercooling becomes small enough to causethe formation of a stable nucleus.12) C) Magnetic quantum number describes the orbitals for each azimuthal quantum number.Q2 :-Circle the correct word in the following sentence(01)Materials that have high binding energy have high/low strength and melting temperature.2) Materials with ionic bonding have a particularly large/small binding energy due to thelarge/small electronegativity difference between the ions. Metals have relativelyhigher/lower binding energies as the electronegativities of the atoms are similar.3) A low-activation energy and rapid diffusion rate are obtained for (1) interstitial/vacancydiffusion, (2) crystal structures with a higher/smaller packing factor, and (3) materialswith a high/low melting temperature or weak atomic bonding.4) Smaller grain size higher/lower structural disorder.5) Smaller grain size harder/lower to move dislocations across grain boundaries due tomore barriers for slip.6)More barrier for slip higher/lower material strength.

Given Materials To find True and False

Q1(C True or False Answer 10 of 12 ( C The interstitial diffusion coefficient for a small atom diffusing in a metal is usually larger than its diffusion coefficient via a vacancy mechanism. 2) 1) C) HCP has an "ABAB" stacking sequence, FCC has an "ABCABC" stacking sequence. 3) C) Dislocations move most easily in a crystal along the highest density planes along the lowest density direction. dinorome gixc only cquilibrium information about the stability of phases. nf the 7 crystal systems.

Q1(C True or False Answer 10 of 12 ( C The interstitial diffusion coefficient for a small atom diffusing in a metal is usually larger than its diffusion coefficient via a vacancy mechanism. 2) 1) C) HCP has an "ABAB" stacking sequence, FCC has an "ABCABC" stacking sequence. 3) C) Dislocations move most easily in a crystal along the highest density planes along the lowest density direction. dinorome gixc only cquilibrium information about the stability of phases. nf the 7 crystal systems.

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

Problem 1.1MA

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