QI (a) Draw the voltage transfer characteristics - VTC - for an NMOS transistor MI having the drain (D) connected to a DC bias voltage VoD through a resistor Ro, the gate (G) connected to a voltage source vg and the source (S) connected to the ground, as shown in Figure 1. In which region of the VTC is it better to bias M1 to operate it as voltage amplifier? Justify your choice. (b) Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1. State the validity of approximations. Design the circuit Figure I to operate as a common source amplifier with a voltage gain of | Gv |= 10 on the hypothesis that M1 is properly biased in the right region of operation and has a transconductance gm = 2.5 mS and output resistance r. = 80 kSn. In the small signal equivalent circuit of the amplifier the source is shorted to the ground and the gate is connected to ground through a resistor RG. State any assumptions and show the calculation. (c) Rp M1 Vas Vss-OV Figure 1

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QI (a)
Draw the voltage transfer characteristics - VTC - for an NMOS transistor M1
having the drain (D) connected to a DC bias voltage VoD through a resistor Rp,
the gate (G) connected to a voltage source vgs and the source (S) connected to
the ground, as shown in Figure 1. In which region of the VTC is it better to bias
MI to operate it as voltage amplifier? Justify your choice.
(b)
Draw the small signal equivalent circuit model valid in the mid-band frequency
range for the circuit shown in Figure 1. State the validity of approximations.
Design the circuit Figure 1 to operate as a common source amplifier with a
voltage gain of | Gv|= 10 on the hypothesis that MI is properly biased in the
right region of operation and has a transconductance gm = 2.5 mS and output
resistance r. = 80 kSn. In the small signal equivalent circuit of the amplifier the
source is shorted to the ground and the gate is connected to ground through a
resistor Ra. State any assumptions and show the calculation.
(c)
Ro
D.
M1
VGs
Vs-ov
Figure 1
Transcribed Image Text:QI (a) Draw the voltage transfer characteristics - VTC - for an NMOS transistor M1 having the drain (D) connected to a DC bias voltage VoD through a resistor Rp, the gate (G) connected to a voltage source vgs and the source (S) connected to the ground, as shown in Figure 1. In which region of the VTC is it better to bias MI to operate it as voltage amplifier? Justify your choice. (b) Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1. State the validity of approximations. Design the circuit Figure 1 to operate as a common source amplifier with a voltage gain of | Gv|= 10 on the hypothesis that MI is properly biased in the right region of operation and has a transconductance gm = 2.5 mS and output resistance r. = 80 kSn. In the small signal equivalent circuit of the amplifier the source is shorted to the ground and the gate is connected to ground through a resistor Ra. State any assumptions and show the calculation. (c) Ro D. M1 VGs Vs-ov Figure 1
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