Question 1 Question Completion Status:QUESTION 1What is the hole quasi-Fermi level w.rt intrinsic level for silicon crystal at 300K doped with 8.21*10^17/cc Phosphorous atoms andilluminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 7.78*10^-9 seconds. Three significant digits and fixedpoint notation.QUESTION 2What is the average distance in microns an electron can travel with a diffusion coefficient of 25 cm^2/s if the electron lifetime is 5.34microseconds. Three significant digits and fixed point notation.QUESTION 3What is the resistivity in ohm*cm of silicon doped with 6.39*10^14 Arsenic atoms and 1.86*10^17 Aluminum atoms assuming theelectron and hole mobilities are 1500 and 500 cm^2/(V*s). Three significant digits and fixed point notation.

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QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 8.21*10^17/cc Phosphorous atoms and illuminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 7.78*10^-9 seconds. Three significant digits and fixed point notation.

QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 8.2110^17/cc Phosphorous atoms and illuminated with 510^18 photons/(ccsecond), and a minority carrier lifetime of 7.7810^-9 seconds. Three significant digits and fixed point notation.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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