QUESTION 3 We have an abrupt junction silicon solar cell at 300K that is doped with Na=5.0*10^18/cc, and Nd-8.3*10^15/cc. If it is receiving ligh that generates 1 milliamps/cm- what is the open circuit voltage (V). You can assume Dn= 35 cm2 Dp = 10- cm2 minority carrier lifetimes of 100ns, and that every absorbed photon generates and electron and hole pair that contributes current. Three significant digits and fixed point notation. -Im Maximum power rectangle VA Vm Voc "Semiconductor Device Fundamentals," by Pierret, figure 9.9, page 357.

QUESTION 3 We have an abrupt junction silicon solar cell at 300K that is doped with Na=5.010^18/cc, and Nd-8.310^15/cc. If it is receiving ligh that generates 1 milliamps/cm- what is the open circuit voltage (V). You can assume Dn= 35 cm2 Dp = 10- cm2 minority carrier lifetimes of 100ns, and that every absorbed photon generates and electron and hole pair that contributes current. Three significant digits and fixed point notation. -Im Maximum power rectangle VA Vm Voc "Semiconductor Device Fundamentals," by Pierret, figure 9.9, page 357.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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