The resistivity of an intrinsic Si sample if if n; = 1*1010 / cm3, Hn = 1450 cm?/V.s, µp = 500cm?/V.s, and q = 1.6*10-19 C, is%3DOa.3.12*106 (0.cm)1O b. 3.12*10 (N.cm)Oc 3.205*105 (N.cm)Od.3.205*105 (N.cm)1

Semiconductors are materials with conductivity intermediate between conductors and that of…

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width ϗ(kai)DT (μm) when the surface is inverted.
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
What are electron,hole,intrinsic carrier concentration, and energy band gap in si with (a) Nd= 4×10¹⁶ cm⁻³ and Na=1×10¹⁶ cm⁻³ and (b) additional 6×10¹⁶ cm⁻³ of ND ? Note: use Effective density of conduction band= 2.8 ×10¹⁹ cm⁻³ .Effective density of valance band =1.04 × 10¹⁹cm⁻³.T=300K ,Boltzmann constant = 1.38 x 10⁻²³ kgs⁻²K⁻¹
The expression to calculate the conductivity of extrinsic silicon is given by, The density of acceptor atom is na=1022 m−3na=1022 m-3. The intrinsic density is ni=1.4×1016 m−3ni=1.4×1016 m-3. The mobility of electron is μe=0.16 m−3μe=0.16 m-3. The mobility of holes is μh=0.045 m−3μh=0.045 m-3. σ=naμhe 0 / 2 Images Ask an Expert Submit your question
An N-type wafer with a bulk concentration of 4.5 X 1015/cm3 was diffused with Boron with a surface concentration of 5 X 1018/cm3, and resulted to a junction depth of 4μm. a.) How long(in hours) did the diffusion take if the diffusion temperature was 1373°K? D0= 10.5 cm2/s EA= 3.69 eV b.) The Boron diffusion process of (A) is followed by a drive-in process for 18 hours at 1350°C. Find the junction depth (in μm), after the drive-process. Round-off up to 4 decimal places for the entire solution till the final answer.
Electrical Engineering a light beam illuminates a detector made of n type silicon with doping Nd=9.3E16cm-3 such that the carrier generation rate is g'=6.6E21cm-3s-1. Assume that tau n0=1.4E-6 and tau p0=5.1E-7, T0=300K. a) determine the thermal equilibrium value of Ef-Efi. b) calculate the quasi-fermi levels for electrons and holes with respect to Efi.
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(A) compute the concentration of electrons and hole in an intrinsic sample of Si at room temperature you may take me = 0.7 mo and mh = mo (b) Determine the position of fermi level under these condition ?
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For silicon at T = 500 Kwith donor density N_D = 5 *10^{13} cm^{-3} and acceptor density N_A = 0, calculate the equilibrium electron concentration in cm^{-3} In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.

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The resistivity of an intrinsic Si sample if if n; = 1*1010 / cm3, Hn = 1450 cm?/V.s, Hp = 500 cm?/V.s, and q = 1.6*10-19 C, is O a 3.12*10 (0.cm)" Ob. 3.12*106 (0.cm) 3.205*105 (n.cm) O d. 3.205*105 (n.cm)

The resistivity of an intrinsic Si sample if if n; = 11010 / cm3, Hn = 1450 cm?/V.s, Hp = 500 cm?/V.s, and q = 1.610-19 C, is O a 3.1210 (0.cm)" Ob. 3.12106 (0.cm) 3.205105 (n.cm) O d. 3.205105 (n.cm)