Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is C(10). The ratio of the capacitance was measured to be C(O/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here The depletion region width on the p-side, zp, Was found to be 20% of the entire depletion region width, Ip. Find the doping density, Na in the p-side in unit of cm . Answers within 5% error will be considered correct. Enter answer here Find the doping density, Np in the n-side in unit of cm. Answers within 5% error will be considered correct.

Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is C(10). The ratio of the capacitance was measured to be C(O/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here The depletion region width on the p-side, zp, Was found to be 20% of the entire depletion region width, Ip. Find the doping density, Na in the p-side in unit of cm . Answers within 5% error will be considered correct. Enter answer here Find the doping density, Np in the n-side in unit of cm. Answers within 5% error will be considered correct.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Answer ASAP, I'll upvote. Thanks. Take the first part of the energy band figure shown below where material A is attached to material B. If a positive voltage was applied to A, and B was attached to ground, is the AB junctionforward-biased or reverse-biased? The built-in voltage of a PN junction is due to a charge gradient between the two sides of the junction, as shown by the graphs. What is the cause of this charge gradient? Answer in 1 sentence.
the emf source, E=3.2 V, of the circuit shown in the figure has negligible internal resistance. the resistors have resistances R1=3 ohm and R2=4.2 ohm. the capacitor has a capacitance C= 3.1uF. A) determine the time constant t , in units of microseconds for charging the capacitor. B) what is the charge Q on the capacitor in units of microcoulomb?
True or false a.A p-n junction has a variable capacitance depending on bias. b.n a depletion mode MOSFET the channel is created by implantation of ions not gate bias. c.Diffusion capacitance is zero if the diode length is longer than the diffusion length. d.We can accurately predict the energy and time of an electron. e.. Avalanche breakdown occurs if the potential barrier is narrow, allowing for tunneling of carriers f.For an Schottky contact there is a higher concentration of majority carriers at the interface g.Current can flow between source and drain with a gate bias, VG=0 in an enhancement modeMOSFET. h.To achieve forward active mode in an NPN bipolar junction transistor, the base-emitter voltage must be forward biased and the base-collector voltage must be reverse biased to ensure that electrons from the emitter make it to the collector. i.The Early Effect causes a decrease in IC with increased VC as the depletion region from the collector extends significantly into the base
A junction employs ND = 5 × 1017 cm−3and NA = 4 × 1016 cm−3.(a) Determine the majority and minoritycarrier concentrations on both sides.(b) Calculate the built-in potential atT = 250 K, 300 K, and 350 K. Explainthe trend.
For the attenuator circuit shown, assume C1 and C2 to be very large (∞) capacitors. Don’t be thrown off by the capacitors (How do they behave at DC? How do they behave at AC if C =∞). Assume D1 and D2 are identical diodes with n=1, V T = 25 mV (use the exponential model). a. Determine the value of the dc voltage, V_N when I = 1mA. b. Draw the small-signal equivalent circuit, replacing the diodes with their small signal resistive model, r_d. c. Determine the value of V_o/V_s when I = 1mA.
.An abrupt p-n junction has a doping concentration of 10^15, 10^16, or 10^17 cm-3 on thelightly doped n-side and of 10^19 cm-3 on the heavily doped p-side. Obtain series of 1/C^2versus V, where V ranges from -4 to 0V in steps of 0.5V. Comment on the slopes and theinterceptions at the voltage axis of these curves.
When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?
Given the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.
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Below is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively. a) Estimate the maximum power output. b) Calculate the fill factor and power conversion efficiency of this solar cell. c) Assume a photovoltaic system consisting of such solar cell is installed in the rooftop of a house with an overall device active area of 30 m2 . The solar irradiation on the rooftop for each day is equivalent to 4 hours of AM1.5G illumination. Please estimate the total electricity generated annually (in kWh). x
An abrupt silicon junction of area 0.003 cm2 has the following parameters: ND = 2 * 10^18 cm-3 (n-side) and NA = 2 * 10^16cm-3 (p-side)a) Calculate the difference between the Fermi level and the intrinsic Fermi level onboth sides.b) Calculate the built-in potential at the junction in equilibrium and the depletionwidth.c) Draw and label the band diagram.d) Determine the total number of exposed accepters in the depletion region.
A pn junction operating in this forward-bias region with a current I of 0.4 mA is found to have a diffusion capacitance of 1 pF. What diffusion capacitance do you expect this junction to have at I = 0.1 mA? What is the mean transit time for this junction?