A semiconductor is irradiated with light such thatcarriers are uniformly generated throughout itsvolume. The semiconductor is n-type withN, = 1019/cm³. If the excess electron concen-tration in the steady state is An = 1015/cm3 andif t, = 10 usec. (minority carries life time) thegeneration rate due to irradiation%3D

A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N, = 1019/cm3. If the excess electron concen- tration in the steady state is An = 1015/cm3 and if t, = 10 usec. (minority carries life time) the generation rate due to irradiation %3D %3D

A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N, = 1019/cm3. If the excess electron concen- tration in the steady state is An = 1015/cm3 and if t, = 10 usec. (minority carries life time) the generation rate due to irradiation %3D %3D

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Consider the topic Solar Cells. (a) Explain the working principle of Solar Cells by using energy band diagram (photon absorption) (b) Explain first, second, third generation solar cells, (c) Give examples of materials to be used as Solar Cells with their band gap magnitude. Optoelectronics
Answer ASAP, I'll upvote. Thanks. Take the first part of the energy band figure shown below where material A is attached to material B. If a positive voltage was applied to A, and B was attached to ground, is the AB junctionforward-biased or reverse-biased? The built-in voltage of a PN junction is due to a charge gradient between the two sides of the junction, as shown by the graphs. What is the cause of this charge gradient? Answer in 1 sentence.
(a) Sketch the Fermi- Dirac distributionf(E) at room temperature (300 K) and at a lower temperature such as 150 K. (Qualitative hand drawing.)
A silicon diode is fabricated by starting with an n-type substrate (Nd = 1016 cm-3), into which indium is diffused to form as a p-type region doped at 1018 cm-3. Assuming that an abrupt p+ -n junction is formed by the diffusion process. a. Calculate the Fermi level position in the p and n regions b. Determine the built in potential c. Calculate the depletion widths on the p and n side.
In a mos capacitor with an oxide layer thickness of 10nm,the maximum depletion layer thickness is 100nm.The premitivity of the semiconductor and the oxide layer are epsalon s and epsalon ox respectively.What is the ratio of the maximum capacitance to minimum capacitance of this MOS capacitor.Assume epsalon s / epsalon ox =3
For an ideal Si-SiO2 MOS capacitor with d = 5 nm, NA = 1017 cm–3, find the applied voltage and the electric field at the interface required to make the silicon surface intrinsic.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
Which of the following options best describes the reason of why we use Fermi-Dirac distribution function? A. To see the spin number of fermions at different occupied energy levels. B. To obtain temperature-dependent behaviours of fermions when they spin faster. C. To understand how fermions are probabilistically distributed over the energy levels. D. To anaylze how fermions emit energy in the energy level that they occupy. E. To determine whether the occupation of the energy levels by fermions can be altered by bozons.
A semiconductor has a bandgap of 2 eV and effective densities of states of Nc = 1019/cm3 and Nv = 5x1018/cm3. If this semiconductor is doped with 1017donors/cm3 (fully ionized), calculate the hole, electron, and intrinsic carrier concentrations at 600C. Sketch the band diagram and indicate the position of EF.
When a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If we extend this thinking and apply it to an interface between a metal and (p-or n-type) semiconductor to make a metal-semiconductor heterojunction, what will the expected outcome be? Use diagrams and words to explain.
. A parallel-plate capacitor has a plate separation d and plate area A. An uncharged metallic slabof thickness t is inserted midway between the plates. Determine the:a. Find the capacitance of the device.b. Show that the capacitance is unaffected if the metallic slab is infinitesimally thin.