Dopant

Additionally, once the zeolite molecular sieve columns are saturated with radium, the resulting solid radioactive waste must be disposed of because the radium binds too tightly to the zeolite and cannot be removed for future use in energy or heat production. Thus, this method still produces radioactive waste, which has reached a total of one million tons in just one year.17 Because the solid waste produced exceeds radioactive material soil application and landfill limits, this waste must be disposed

Triton X-100. For device fabrication materials were procured from Solaronix. In a typical synthesis process, the reaction solution was prepared by mixing 6g of Zinc acetate dihydrate in 70:30 ratio of ethanol/water. The ZnO precursor containing In-dopant was prepared with 0.0, 1.0, 3.0 and 5.0 mole % of indium. A thick white gel was formed after the addition of NaOH into the reaction solution, the mixture was kept under magnetic stirring for 24h to provide perfect growth, the resulting white gel was

area, and better capacitive behavior as compared to CNT. However, the Zn-doped nanocomposites have enhanced current densities as compared to SnO2-based nanocomposites, probably because of two reasons viz. First, the incorporation of Zn2+ ions as dopants decreases the size, and second, the substitution of the Zn2+ ions for the Sn4+ ions modifies the surface and forms more oxygen vacancies for charging compensation. Thus, the CV curve confirms the successful interaction between the metal oxides and

be controlled during synthesis by adjusting the temperature, pH or feed-ratio of reagents [2, 9].Another way to control the band gap energy is to modify the surface ligands attached to the surface of the quantum dot. Surface ligands are similar to dopants in semiconductors in that they alter the band gap energy by providing additional electrons or holes to the nanoparticles. Shell of ligands allows the quantum dots to be suspended in a variety of organic solvents and water, permitting

Indium-tin oxide (ITO) is a well-known n-type transparent semiconducting oxide material. ITO is an In2O3 based material that has been doped with Sn to improve the electrical conductivity. Here tin acts as a cationic dopant in the In2O3 lattice and substitute on the indium sites to bind with the interstitial oxygen. Due to its high optical transmittance in the visible region, high electrical conductivity and wide band gap (>3.5 eV), it has been widely applied in various optoelectronic devices such

I’m from Syracuse, New York and graduated from Williams College in Massachusetts with a degree in physics. Immediately after graduating, I accepted an offer from Westinghouse because it was a management training program which promised to expose me to several engineering opportunities and allow me to choose the one I liked best. So I went to work at Westinghouse in Youngwood, Pennsylvania in the semiconductor business. In that job, I was setting up a wafer fab operation and making simple semiconductor

The morphology of pristine CuO nanoparticles are determined by TEM micrograph as shown in figure 3 (a), the exhibits stacking of small flakes broken of CuO nanostructures giving leafy profile which had agglomeration. The leaf-like flakes have small width with an average size of the flakes is 500–600nm and thickness ~20–30nm. The corresponding SAED pattern (Fig. 3b) clearly shows that the CuO flakes are polycrystalline. Similar observation has obtained by SEM results (Fig. 3c), which demonstrates

loss: the first stage occurs between 20–150ºC with mass loss of 13.13% relative to water loss, HCl and volatile components; the second stage, between 150–400ºC, with 6.08% of loss weight and is relative to release of oligomers and vaporization of dopant ions; the third and last stage, between 400–800ºC, with 14.61% of loss weight, is relative to degradation of the polymer chains of Pani and rupture of the benzene rings; and 66.34% of residue[44,45]. Pani-Chitosan showed a very similar behavior compared

Nanotechnology, which is one of the new technologies, is the science and technology of designing, constructing and creating of novel nano-scale structure, 1nm to 100 nm in size, with huger quality, novel performance properties, along with fewer defects compared with those of the bulk material (Siqueira et al., 2010). An increasing interest from the scientific community to work with materials in nano metric scale has been observed since the introduction of the concept of nanotechnology by Richard

THYRISTOR RAM Muktesh Waghmare, Raman Gaikwad 1: Principle: Thyristor is well-known for its high-current drive capability and its bi-stable characteristics. It has been widely used in power electronics applications. With the exponential advances in CMOS technology tiny thyristor devices can now be easily embedded into conventional nano-scale CMOS. This enables the creation of a memory cell technology with features that include small cell size, high performance, reliable device operation, and