ELEC160 Lab 4

Give a conclusion about BIPOLAR JUNCTION TRANSISTOR: OPERATION AND ITS CHARACTERISTIC CURVE

• In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base A. Substrate, B. Slab, C. Source, D. Base.

A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) I

04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)

a) Figure B3 shows a cross section for a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in diagrammatic form. (i) (ii) Sketch the energy band diagram for the MOSFET along the line X-Y shown in Figure B3 when bias voltages are applied such that the silicon surface is inverted. Label all important features of your sketch and state any assumptions made. Sketch a box plot showing the charges present in the structure when the silicon surface is inverted. Indicate the source of all the charges and state whether they are positive or negative. Source n+ Metal Silicon Substrate - p X dioxide Drain n*

Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD

QUESTION 1 By referring to Figure Q1, determine: a) The Q-point values of Ic and VCE. b) Draw the DC load line and plot the Q-point based on answer from Q1(a). c) The diode emitter resistance, re and draw re transistor model (AC equivalent circuu). d) The input impedance, Zi as seen from the input voltage. e) The output impedance, Z, as seen from output. f) The voltage gain, Av and the current gain, A¡.

Explain the two types of MOSFETs (draw the physical structure as well). Also explain themajor difference between them regarding mode of operation?

These are all about Bipolar Junction Transistors: How do you ensure that a BJT is in saturation? Give an example of an application that uses a BJT switch.

In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.

TransistorsFill in the blanks with the words below:amplify, bipolar transistor, current, device, embedded, field, field-effect transistor, fundamental,implemented, milestones, standardized, terminals, ubiquitous, vacuum tube, voltageA transistor is a semiconductor 1……….. used to amplify or switch electronic signals and electrical power. It iscomposed of semiconductor material usually with at least three 2 …………. for connection to an external circuit. A3. ………… or current applied to one pair of the transistor's terminals controls the current through another pair ofterminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can4 …………… a signal. Today, some transistors are packaged individually, but many more are found 5 …………. inintegrated circuits.The transistor is the 6 …………. building block of modern electronic devices, and is 7. …………in modern electronicsystems. Julius Edgar Lilienfeld patented a 8 …………….. in 1926 but it was not…

Subject:Electronics Engineering  With a neat circuit diagram, explain the Voltage Divider Bias circuit using approximate analysis. Also derive the equation of stability (S) for Voltage Divider Bias circuit.

You have been given a Silicon-based BJT transistor with the leads labelled as shown in the figure: Plastic Body TO-92 1. Emitter 2. Base 3. Collector 123 Given that this transistor is either a PNP or NPN variant, create a step-by-step procedure for using a DMM with "diode check" feature to identify whether (a) it's an NPN or PNP (b) it's a PNP or NPN that has failed in some way (e.g. failed as open, or as a short)

Pls help ASAP. Pls show all work.

a) Draw the energy band diagram of a MOSFET transistor, when -5 volts are applied to the drain contact. b) Explain what will happen to the Fermi level at the source contact and the drain contact in the following scenarios (Use an appropriate energy diagram to illustrate your answer): A positive voltage is applied to the drain contact. A positive voltage is applied to the source contact. c) Explain why current flow in a MOSFET transistor. Use a diagram to illustrate your answer.

Show the fermi level status using energy band diagram of PN junction before and after biasing.

Q1) Answer True or False for the following: 1- Field-effect transistors are Bipolar devices. 2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to source voltage. 3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the breakover potential. 4- The benefit of SCR Crowbar is power amplification. 5- Most op-amps require only a positive dc supply voltage.

27 - What can be said about the emitter-collector internal resistance of a transistor in conduction?A) It will be very variable.B) It will be the same as in insulation.C) It will be very low.D) It shows infinite resistance.E) It will be very high.

All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....

QUESTION 4 In this voltage divider bias circuit, the input is at the base. Output is at the emitter with a high input resistance and low output resistance. The maximum voltage gain is 1 and the coupling capacitors must have a negligible reactance at the frequency of operation. (use to answer a and b) a. Derive the expression for the voltage gain, current gain, and power gain in terms of power delivered to the load, RL. b. Sketch both the DC and AC equivalent circuits. c. Derive the expression for ripple factor of Half Wave Rectification with a capacitor filter.

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

Please answer the question with neat handwriting

The terminal of the JFEI' is the equivalent of the emitter terminal of a BJT. Select one: A. drain B. gate C. anode D. source Previous page Next page

The arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. that it is a P-channel MOSFET Oc. the direction of electrons O d. the direction of conventional current flow

In the following circuit, the nMOS has a threshold voltage of Vr = 1.0 Vand K = 2 mA/VÅlso given that R1 = 3 kNVpp identical with vp. = 0.9(i.e. use CVD model for the diodes). Our task is to set the value of Rp such that the MOSFET will be operating at the edge of saturation. What's edge of saturation? We know in the triode region vps vGs – VrHence, the edge of saturation means when vps = vGS - VAt this mode, both the equations for In in saturation mode and triode mode would give the exact 6 Vand the diodes are same result, VDD VDD Rp R1 KIKKH

Example 8:-

05: Choose the correct answer: 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and soarce None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed • Concentration gradient in holes • Concentration gradient in free electrons All of these) 4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS…

How does the construction of a transistor differ from the construction of a PN junction diode? What are the two types of transistors? What are the three parts of a transistor called? Draw and label the schematic symbols for an NPN and a PNP transistor. What are transistors used for? How are transistors classified? What symbols are used to identify transistors? What purposes does the packaging of a transistor serve? How are transistor packages labeled? What are the basic functions of a transistor? What is the proper method for biasing a transistor? What is the difference between biasing an NPN and a PNP transistor? What is the barrier voltage for a germanium and a silicon transistor? What is the difference between the collector-base junction and the emitter- base junction bias voltages? What may cause a transistor to fail? What are two methods of testing a transistor? When using an ohmmeter, what should the results be for an NPN transistor? What are the two…

What are the differences between the working principles of diodes and BJT transistors? Explain pls.

Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]