ECE Electronics 315 4a_IP_2021

ASAP

This problem is AC analysis problem. DC analysis is not needed to answer the question. A) Convert this bias circuit into a bypassed common emitter amplifier that has an output across a load resistor (RL). To do this you should draw three capacitors on the figure below, an input voltage source, and any resistors you think that should be added. B) In the space below the figure, Draw the hybrid t model for this amplifier circuit including all voltages and resistors. Label Vi, Vbe, and vo on the model. Assume the capacitors you add act as short circuits at AC. Be sure to include resistors R1, R2, R3, R4, and RL in the hybrid pi model. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vo for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. 12V Assume the following: o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O…

2 a) i) Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing. ii) Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.

Electronic 2 : For the network in the figure: a) Obtain the necessary equation for IB Base current b) Find the quiescent (Q) point and show it on the VCE - Iccharacteristics figure. (show IBQ, ICQ, and VCEQ) c) Explain the effect of using RE, and collector feedbackon the transistor circuit. (Transistors are Silicon in all solutions)

How to calculate the bias resistor of a common emitter amplifier. The design curretn is 0.55mA. Bera is assumed to be 200 and the Vcc = 12V. Note: the bias resistor should be high.

Exersice 4: For the Darlington amplifier circuit used in an emitter-follower configuration appears in figure below: . Determine the dc levels of Vi, Ve, Vi, Ves, and Ver. . Find the currents I, Iz, and Irz. . Calculate Zi and Zo. . Determine the voltage gain Ay = Vo/Vi and current gain Ai=IL/l;. . Repeat parts 1 to 4 with a load resistor of 1.2 kQ. . Evaluate A = Vo/Vs if the source has an internal resistance of 1.2 kQ and the applied load is 10 kQ. omAwWNE 416V L i prammm, I Tour i,

A transistor amplifier which uses a npn BJT and various passive components is shown in figure Q1. A table of components values is shown in Table Q1. For this amplifier: a) Calculate the following dc voltages and currents; VB, VE, le and le. b) Draw a r parameter ac small-signal model. The model should be correctly labelled with transistor voltages and all small-signal parameters. Detail assumptions and limitations. c) Calculate the small-signal input resistance Rin, output resistance Rout and output voltage Vout. Detail assumptions and limitations. d) Calculate the small-signal voltage and current gain Av and A. Also calculate the output voltage. Vcc R3 R. R: Figure Q1 R3 = 2 kQ Vin = 10 mV Table of Component values and Transistor Parameters R2 = 10 kQ VT = 24 mV R1 = 40 kQ R4 = 1 kQ VBE = 0.7 V B = 200 %3D Vcc = 10 V C=2mF

1 The AC input to a common emitter amplifier (Figure 1) is such that it is comparable to thermal voltage VT. For such an amplifier: a. Please show how a hybrid – T small-signal model would look like. Do not ignore early effect. b. Please derive relation for the terminal voltage gain and overall voltage gain. Vcc Rc R RE C Figure 1 You uolont oirouit

5) Design a Common source E-MOSFET amplifier and write the formula of voltage gain.

Exercise 1:-

Q1. (a) Consider the amplifier circuit in Figure Q1(a). Given the following: RI = 100 k2 R2 = 56 kN Rc =2 k2 Vcc = +8 V Assume the transistor has B = 100 and VBE(on) = 0.7 V. You may neglect Early effect and use VT = 26 mV. (i) Draw the DC equivalent circuit, then determine Iç and VCE. Draw the AC equivalent circuit using re model. Based on this, determine the parameters Av, Rin and Rout. (ii) Vcc Rc R1 R2 C3 Vout C2 Ci Vin Figure Q1(a)

Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and  Voltage at common collector is +28V,Voltage at Base-emitter junction  is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.

Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.

Remove the bypass capacitor C2 and repeat part (c). Discuss about the effect of the bypass capacitor on the voltage Vout = Vin = AV =

The DC Current Gain of a Transistor is Select one: a. Ratio of Collector Current to Base Current b. Ratio of Base Current to Collector Current c. Ratio of Emitter Current to Collector Current d. Ratio of Base Current to Emitter Current

Consider the circuit in Figure 2. The transistor has a parameter B that varies between 50 and 200. You want to know the operation of the circuit and the electrical variables at the end points. Calculate the following for B= 50 and B= 200. a) IE, VE and VB (Analysis in DC). b) The input resistance R." (Small signal analysis). c) The voltage gain VO/Vsing (Small signal analy). This 10 ΚΩ www o Rin 100 ΚΩ +3V +1₁ HH 1 ΚΩ 1₁ 1 ΚΩ

9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.

2) Consider an enhancement MOSFET common source amplifier circuit in Figure 2(a). The output characteristic is showed in Figure 2(b). Assume that the circuit is operating in the saturation region and k = 5 mA/V2. It also given that ra = ro = 00, Cgd = 2 pF, Cgs = 4 pF, Cas = 1 pF, Cwi = 4 pF and Cwo = 3pF. a. Using DC load line, prove that Ino = 22.5 mA and VpsQ = 5.5 V for Vaso = 2.5V. (Please attach the characteristic graph provided in your working solution) b. Draw the AC equivalent circuit at mid frequency. c. Estimate the voltage gain Av = Vo /Vi. d. Determine the dominant high cut – off frequency for the circuit. 10 V Rp 100 2 6 MQ C2 ci Rs RL Vo 1002 R: 5002 Rs Vo 14 MQ Cs 100 2 Vs Figure 2(a) 60- 50 30 20 10 9. 10 Figure 2(b) (yu) 4

1) Calculate the DC parameters listed in Table 1 for Q1 and Q2 for the MOSFET amplifier circuit shown in the figure. 2) Calculate the AC parameters. Compute the gain by completing the small signal analysis. Draw the input and output signals to scale.

Draw the equivalent circuit for a common-emitter bipolar transistor amplifier andderive suitable formulae for the amplifier current gain, voltage gain and power gain.Neglect bias,decoupling and coupling components

Discussion Theoretically, find the values of input resistance and output resistance of common emitter transistor according to the setup that you have used during the procedures' steps. Compare between theoretical and practical results.

Activity 2: The amplifier circuit below has a single ac input and two ac outputs. Assuming transistor parameters of B= 130 and VBE=0.7 V: 15 V 15 V W 350 ΚΩ 300 ΚΩ H11 13 ΚΩ 10 ΚΩ

. Part a: List the elements included in the total input resistance of a common-collector amplifier. What is the phase relationship of the input and output voltages of a CE(common emitter) and CC(common collector) amplifier?

The n-channel enhancement-mode MOSFET of Figure below

Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.

The amplifier circuit below has a single ac input and two ac outputs. Assuming transistor parameters of B= 100 and VBE - 0.6 V: a) Determine the Q point. b) Is the transistor in the active region? Explain thoroughly. c) Construct the T-model of the transistor with all parameters labelled and evaluated. Assume room temperature. d) Draw a complete small signal circuit model, then find the voltage gain for both outputs. e) Based on the analysis results, what is the function of this circuit? Suggest a proper application. 3) Assuming that each output is feeding a 50-k2 resistor, determine the total voltage gain and current gain for both outputs. Also, caleulate the amplifier input resistance and the amplifier output resistances. 10 V 10 V Rc= 3.3 kl 100 kn 8. 50 kn RE = 3 kſ2 3D!

"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why?  How does that actually work?   My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking.  He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!

In a common-base circuit, the output is taken from the: A) Emitter. B) More than one of the above. C) Base. D) Collector.

Figure 4 shows a collector-feedback bias circuit. By assuming ideal cut-off and saturationconditions: i. Evaluate the suitability of the Q-point position of both circuits on the DC load line at  B dc= 100ii. Evaluate the stability of Q-point produced by the circuits if the value of  B dc decreases from 100 to 80 for both circuits.

Fixed-bias configuration, Emitter-bias configuration, and Voltage-divider configuration- rank these three configurations based on their provided stability (i.e. ? independency)to the operating point. Use mathematical terms/equations to explain and justify your