lab 8 x

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answer number 2.write your solution pls.

Give realtive relations between and relative parameters for the following: 1.) ohmic resistance 2.) ballistic transport 3.) quantification of conductance

Write the answers precisely, do not elaborate unnecessarily, and don't use chatgpt, if i caught it I'm gonna downvote Question: Discuss the electrochemical techniques that are useful to study the capacitive properties of a material. Highlight the importance of each technique

Explain the modifciation to be made to the schering bridge for the following situations: i) Hihg dissipation factor test objects  II) High capacitance test objects  Explain in easy language so i can understand

Fill the blanks with suitable following terms (AND gate, Potential Transformers (PT), cathode ray oscilloscope CRO, electronic switch Current Transformers (CT), DC component, cathode ray tube (CRT), AC component, electron.gun. 1.The heart of a ............is the................. the electron beam is generated, accelerated, and deflected in accordance with the input signal. 2. Power measurements in high-voltage high current circuit can be effectively done by the use of...and.. ...in conjunction with conventional wattmeter. 3. The sig ...ose frequency is to be measured is converted into a train of pulses (Using Comparator for example), one pulse for each cycle of the signal and applied continuously to an...A 4. In Average Responding Voltmeter, the AC signal is first applied to the blocking capacitor used at the input to block any..................in the input voltage. 5. Dual Trace Oscilloscope This CRO has a single.....................whose electron beam is split into two by an…

Discussions:Voltage Distribution and String Efficiency of a Model Suspension Insulator       1- Comment on the results obtained.2- Give reasons for unequal potential distribution over the string.3- What is the effect of this un equality on the insulators?4- Can value of the string efficiency being equal to 100%. Explain your answer.5- Outline methods used to equalize the potential across the units.6- Why an insulator is represented as a capacitor C? What are the assumptionmodes?

Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 µ2 cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 µm wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ µm and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) 2 ( ) fF Driver ( ) Ω Wire ( ) fF ₁ Load ) fF d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)

Answer in short but all subparts.. Please..

This question is about electrical conductivity: 1. How are electrical properties different for isotropic 3D bulk and 2D sheets?

You have developed an idea for using a poly Si surface‐ micromachined cantilever. Initially, you designed a process flow for creating this simple structure, and the process flow is detailed in the figure below. ( cross section view and top view)There are several critical errors with this process (things that won’t work or won’t produce the result). Please find the critical errors in this process flow and, where possible, suggest alternate approaches. Do not worry about the accumulation of errors, but rather treat each step assuming that the structure up to that step could be created.This structure is actually quite simple to make. Develop a simpler process flow and associated masks to create the final structure. Be sure to show cross‐sectional and planar views of all key steps in the process.

(b) Figure Q3(b) shows a magnetic circuit with two different material. with a mean cross- sectional area of 25 cm?. The mean core length of steel, Ls1 and Ls2 is 20 cm and 15 cm, respectively. The mean core length of iron, Li1 and Lp is 20 cm and 14 cm, respectively. The air gap length, Lag is 1 cm. Relative permeability of steel and iron is 7000 and 4000 respectively. Fringing effect is excluded. Calculate; Steel Iron Ls1. I2 N2 Steel N1 Iron L11 Ls2. Figure Q3(b) (i) Total reluctances of this magnetic circuit. (ii) Total magnetomotive force required to produced 60 µWb of flux across the air- gap. (iii) Number of turns in coil 1, N1 if both electrical source supply the same amount of current, 5A, assume N1 = N2.

A wire of 59 in length and 4 mm2 has a resistance of 0.94 ohms. A 110-m length of wire of the same material has a resistance of 3 at the same temperature. Find the radius of this wire. The final unit must be in millimeter, mm.

Can you explain in detail? Thank you HIGH VOLTAGE Define Pschen’s theory related to breakdown of gaseous insulating material.

please sir solve these 2 questions, thanks alot

aY A copper wire with (32.3 m) Long, area (5 mm?) and Fhe cross-sectional the resistance is (120 r) at Zero tempera ture Co č) . When the temperature to (50 c) the resistance become rise (144 72), Determine the temperature cofficient (a) the specific resis tivity at (0 C) P.)

Which of the following statement is true? a. Angle between load voltage and load current in a pure capacitive load is 45 degree. b. Angle between load voltage and load current in a pure capacitive load is is 180 degree. c. Angle between load voltage and load current in a pure capacitive load is is zero. d. Angle between load voltage and load current in a pure capacitive load is is 90 degree.

A triac can pass a portion of …………… half-cycle through the load a. neither positive nor negative b. both positive and negative c. only negative d. only positive

Q?: Fill in the following blanks with suitable words : 1. Conductivity of a material depends on: and 2. _can break the bonds in semiconductor crystals and create free electrons. 3. Mobility and Sheet resistance in semiconductor are measured by 4. Name of the force which bend electron trajectories in magnetic field At room temperature, the current in an intrinsic semiconductor is due to is unevenly doped 7. During reverse bias of the diode there is a small current of the order of micro 6 Each semiconductor material in a ampere due to

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It is required to grade a string having seven suspension insulators. If the pin to earth capacitance are all equal to C, determine the line to pin capacitance that would give the same voltage across each insulator (C1, C2, …….C6)  of the string.

Division: Elctronic Eng. Subject: Energy conversion I Year : Second Q1/ A / Discuss B-H curve of a ferro-magnetic material . B / Define the following terms (any three) : (i) MMF (ii ) magnetism. (iii ) Reluctance (v) flux density Q 2 A magnetic circuit has the mean length of flux path of 20 cm, and cross sectional area of 1 cm?. Relative permeability of its material is 2900. Find the mmf required to produce a flux density of 2 tesla in it. If an air gap of 1 mm is intro gap as a fraction of the total mmf to maintain the same flux density. luced in it, find the required the air

Please help prove the 3 equations in the second attached image.