Cadence_tutorial2

Q2. a) Define and describe the Q-point, DC load-line, and AC load-line. b) Is a JFET a voltage controlled or current controlled device? c) What are the roles of the resistor Rs and Rp in a JFET bias circuit?

1. What is the state of the MOSFET shown below? a. Sub-threshold. b. Below saturation. c. Above saturation. d. More information required. V n* Source Gate Drain E₂ E

How does the construction of a transistor differ from the construction of a PN junction diode? What are the two types of transistors? What are the three parts of a transistor called? Draw and label the schematic symbols for an NPN and a PNP transistor. What are transistors used for? How are transistors classified? What symbols are used to identify transistors? What purposes does the packaging of a transistor serve? How are transistor packages labeled? What are the basic functions of a transistor? What is the proper method for biasing a transistor? What is the difference between biasing an NPN and a PNP transistor? What is the barrier voltage for a germanium and a silicon transistor? What is the difference between the collector-base junction and the emitter- base junction bias voltages? What may cause a transistor to fail? What are two methods of testing a transistor? When using an ohmmeter, what should the results be for an NPN transistor? What are the two…

FETs have similar properties to ___. a. Scotty diodes b. NPN transistors c. PNP transistors d. uni-junction transistors

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

QUESTION 1 By referring to Figure Q1, determine: a) The Q-point values of Ic and VCE. b) Draw the DC load line and plot the Q-point based on answer from Q1(a). c) The diode emitter resistance, re and draw re transistor model (AC equivalent circuu). d) The input impedance, Zi as seen from the input voltage. e) The output impedance, Z, as seen from output. f) The voltage gain, Av and the current gain, A¡.

The mode of operation for the D-MOSFET is Select one: a. the ohmic region only b. the enhancement mode only c. both the depletion and enhancement modes d. the depletion mode only

The pinch off voltage is the voltage A. At which gate source junction breaks down, B. Which causes depletion regions to meet, C. The voltage applied between drain & source, D. Neither of these.

What happens to the transistor when at cut-off operation?   a. maximum current flows from emitter to collector b. the transistor is at its operating point c. there is no base current d. no current flows from emitter to collector

6-If the collector resistance is shorted,the ac output voltage will a-Decrease. b-Increase. c-Remain the same. 9 d-Equal zero. 7-If input impedance of the second stage decreases, the voltage gain of the first stage will a-Decrease. b-Increase. c-Remain the same. d-Equal zero. 8-If the load resistance of second stage opens, the voltage gain of the first stage will a-Decrease. b-Increase. c-Remain the same. d-Equal zero. 9-The feedback resistor a-Increases voltage gain. b-Reduces distortion. c-Increases collector resistance. d-Decreases input impedance. 10-when the emitter resistance Rp doubles the ac emitter resistance a-Increases. b-decreases. c-Remains the same. d-Cannot be determined. 11-To reduce the distortion in a CE amplifier, reduce the a-DC emitter current. b-Base-emitter voltage. c-Collector current. d-AC base voltage. 12-The output voltage of a CE amplifier is a-Amplified. b-Inverted. c-180° out of phase with the input. d-All of the above.

Explain this circuits in detail NOT and XOR gate

I need proper detailed step to step answer for this

A depletion MOSFET has IDSS = 10 mA and VP = – 4.5 V. Calculate the drain current at a gate-source voltage of 0 V. Choose the correct answer below: a.10 mA                  b.3.8 mA                         c.– 3.8 mA  d.– 12 mA

Question 1: (a) Describe the effects of the width and doping level of drain drift region of an IGBT on its performance? (b) Discuss the effect of negative temperature coefficient of resistance and localized collector current in a power BJT that causes second breakdown?

please quickly thanks !

Transistor Bias Circuits with detailed explanation of Voltage Divider bias(Explain loading effect of voltage divider bias and Thevenin theorem applied to voltage divider bias). Give brief explanation and calculation of other bias methods

(c) Figure Q3(c) shows an E-MOSFET biasing circuit. R₁ R₂ tur VDD Ro Figure 03(c) Explain briefly the operation of the circuit for the condition when R₁ is opened and when R₂ is opened.

Explain the working of NMOS transistor with the help of drain characteristics curved. (In Depth with diagrams)

4. (a) Draw the IV characteristics of a thyristor and explain what the importance is of the 'latching' and 'holding' current. (b) By describing the construction of an NPN BJT, explain how the BJT can work under different biasing conditions.

I need answer in ohm value and it must be right

State and explain the relation of drain current versus gate to source voltage for an MOSFET.

Apart from the variations in the process parameters, different portions of the design may also see different power supply voltage and temperature. All these differences can arise due to, (i) IR drop variation (ii) Voltage threshold variation of PMOS or NMOS device (iii) Channel length variation (iv) Interconnect metal etch or thickness variations A. i and ii B. i and iii C. ii and iv D. All of above

These are all about Bipolar Junction Transistors: How do you ensure that a BJT is in saturation? Give an example of an application that uses a BJT switch.

IV. In the circuit with a silicon transistor, as shown in the +Vcc Figure, if Viegic = 3.6 V, Vcc = 10 V, VLED = 2.3 V, RE = 270 2, B = 200, 1. identify the type of transistor in use and label the three terminals in the figure. logic input 2. find the base current. 3. find the collector current. 4. find the collector-emitter voltage. RE

What is mean by phase angle control method?. Differentiate Natural and forced commutation method. Is it possible to construct rectifier circuits by MOSFET? Justify.                                           ( short anser only plases )

Describe the operation of an n and a p type enhancement and depletion mode MOSFET

For the circuit shown in Figure B23, a = 0.98, calculate the following: i. Collector current (Ic) ii. Collector-Base voltage (VCB) ii. Emitter Current (IE) iv. Base Current (IB) IE 2.5 k Ouput 4.5V IB Vcc Figure B23 Type here to search