F2022-3EJ4_Lab01

Give a conclusion about BIPOLAR JUNCTION TRANSISTOR: OPERATION AND ITS CHARACTERISTIC CURVE

• In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base A. Substrate, B. Slab, C. Source, D. Base.

This multiple choice questions from electronics lab. The name of experiment is using the multimeter to test transistor diode junction

two applications for a Bipolar Junction Transistor and talk about one in detail

Subject:Electronics Engineering  With a neat circuit diagram, explain the Voltage Divider Bias circuit using approximate analysis. Also derive the equation of stability (S) for Voltage Divider Bias circuit.

With the help of a circuit diagram show that using germanium diode clipper, how we can achieve an ac signal output which is clipped off at 1 V in both cycles. What arrangement we must made to achieve the same output using Si diodes.

Explain the operation and Analyse the performance of a range of discrete semiconductor devices used in modern electronic systems in terms of simple semiconductor theory, and suggesting appropriate applications for each, such as: Triac. • MOSFET. Thyristors.

This multiple choice questions from electronics lab. Pic one is questions && pic two laws. Ic:current of collecter transistor. Ib:current base Ie:of emitter for transistor. I HOPE to help me,thx advanced.???

This Multiple choice questions from electronics lab course &just write for me final answer ,It easy for you.

QUESTION 1 By referring to Figure Q1, determine: a) The Q-point values of Ic and VCE. b) Draw the DC load line and plot the Q-point based on answer from Q1(a). c) The diode emitter resistance, re and draw re transistor model (AC equivalent circuu). d) The input impedance, Zi as seen from the input voltage. e) The output impedance, Z, as seen from output. f) The voltage gain, Av and the current gain, A¡.

All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....

A transistor current is given below. The Zener diode breakdown voltage is 5.3V as shown. Take base to emitter voltage drop to be 0.6V. The value of the current gain ß is ..... 4.7kQ2 0.5mA ↓ 5.3V www 41 + 0.6- www 22092 47092

Explain the two types of MOSFETs (draw the physical structure as well). Also explain themajor difference between them regarding mode of operation?

What sets an integrated circuit distinct from a transistor, and what are their similarities?

Explain the concept of Moore's Law and its implications for the semiconductor industry. Assess whether it is still relevant in the era of nanometer-scale transistors.

A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) I

The mode of operation for the D-MOSFET is Select one: a. the ohmic region only b. the enhancement mode only c. both the depletion and enhancement modes d. the depletion mode only

For the PN junction under sun light, the short circuit current amount is Isc. Please sketch the I-V curve of PN under the sun based on that under the dark condition above. Indicate Isc and Voc in your plot.

You have been given a Silicon-based BJT transistor with the leads labelled as shown in the figure: Plastic Body TO-92 1. Emitter 2. Base 3. Collector 123 Given that this transistor is either a PNP or NPN variant, create a step-by-step procedure for using a DMM with "diode check" feature to identify whether (a) it's an NPN or PNP (b) it's a PNP or NPN that has failed in some way (e.g. failed as open, or as a short)

a) Draw the energy band diagram of a MOSFET transistor, when -5 volts are applied to the drain contact. b) Explain what will happen to the Fermi level at the source contact and the drain contact in the following scenarios (Use an appropriate energy diagram to illustrate your answer): A positive voltage is applied to the drain contact. A positive voltage is applied to the source contact. c) Explain why current flow in a MOSFET transistor. Use a diagram to illustrate your answer.

04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)

Q1) Answer True or False for the following: 1- Field-effect transistors are Bipolar devices. 2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to source voltage. 3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the breakover potential. 4- The benefit of SCR Crowbar is power amplification. 5- Most op-amps require only a positive dc supply voltage.

The arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. that it is a P-channel MOSFET Oc. the direction of electrons O d. the direction of conventional current flow

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

(a) What are Transistor limits of operation? Explain the phenomenon of Break Down in Transistors with the help of sketches? How does this compare with Diodes?

2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0

05: Choose the correct answer: 1. The current in FET flows between terminals. (Drain and gate Drain and source Gate and soarce None of these) 2. The threshold voltage is in enhancement type metal oxide semiconductor field effect transistor. (Positive Negative Zero Positive) 3. The drift current density effected by (An electric filed • Concentration gradient in holes • Concentration gradient in free electrons All of these) 4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS…

List two applications for a Bipolar Junction Transistor and talk about one in detail.

Briefly explain working and characteristics of Power Diodes, Power MosFET and Power Transistor.

Q6) d) Show by means of a diagram how you will normally connect external batteries ini. PNP transistorii. NPN transistore) Describe how a semiconductor will behave at absolute zero temperature.

Pls help ASAP. Pls show all work.