Electronic Devices and Circuits II- Lab 3_Quraiz2

Conclusion: Questions: [1] How to check transistor with help of multimeter? [2] How to check type of transistor (NPN or PNP) with help of multimeter? [3] Define current gain of the transistor in CE configuration. What is the DC current gain you obtain in this practical?

1 a) Write down the equation that relates the collector current of the bipolar transistor to the base-emitter voltage. Hence prove the relationship 9mbe Bowhere the ac parameters are transconductance, base-emitter resistance and ac current gain respectively. c) Draw a schematic diagram of a simple current mirror circuit. Show how it can be extended to form a current repeater. How can the current repeater be improved to allow different bias currents to be realised?

QUESTION 4 a) Discuss four advantages of field effect transistor (FET) over bipolar junction transistor (BJT). b) With the aid of suitable diagrams, explain the primary difference between n-channel depletion and enhancement type metal oxide semiconductor field effect transistors (MOSFETS).

Exercise 1:-

engineering notation

What sets an integrated circuit distinct from a transistor, and what are their similarities?

QUESTION 4 For an n-channel Junction Field-Effect Transistor (JFET), the gate-source cut-off voltage, VGS(OFF), is -4 V and the drain saturation current, Ipss is 50 mA. The drain current ID, is 12 mA. Determine the gate-to-source voltage, Vos, of the JFET.

This is about Bipolar Junction Transistors: Discuss collector characteristic curves and identify and explain the different regions.

Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and  Voltage at common collector is +28V,Voltage at Base-emitter junction  is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.

E only

2 a) i) Draw typical output characteristics of a common emitter npn transistor and clearly identify the active, saturation, and cut off regions on your drawing. ii) Explain how you can find the common emitter de current gain, B, and the common emitter ac current gain, hre, from the common emitter output characteristics of an npn transistor. You need to draw typical output characteristics in scales and provide numerical calculations to support your explanation.

1 The AC input to a common emitter amplifier (Figure 1) is such that it is comparable to thermal voltage VT. For such an amplifier: a. Please show how a hybrid – T small-signal model would look like. Do not ignore early effect. b. Please derive relation for the terminal voltage gain and overall voltage gain. Vcc Rc R RE C Figure 1 You uolont oirouit

Discussion Theoretically, find the values of input resistance and output resistance of common emitter transistor according to the setup that you have used during the procedures' steps. Compare between theoretical and practical results.

I need proper detailed answer for this

What is the characteristics/behavior of common collector configuration in Darlington Pair?

Consider the circuit in Figure 2. The transistor has a parameter B that varies between 50 and 200. You want to know the operation of the circuit and the electrical variables at the end points. Calculate the following for B= 50 and B= 200. a) IE, VE and VB (Analysis in DC). b) The input resistance R." (Small signal analysis). c) The voltage gain VO/Vsing (Small signal analy). This 10 ΚΩ www o Rin 100 ΚΩ +3V +1₁ HH 1 ΚΩ 1₁ 1 ΚΩ

Discuss High level modulator: circuit diagram and operation - Collector modulator

Subject : Electronics Engineering Sketch the transistor input and output characteristics of CE configuration and briefly  explain the three regions of operation.

With Neat sketch explain the construction, operation, VI characteristics, application and features of the power semiconductor device which is having low on state loss and small switching frequency operation

power semiconductor device which is used metal in its PN junction. 2. Draw the equivalent circuit model and switching characteristics of the device which is used for low on state loss and high switching frequency operation.

Electronic 2 : For the network in the figure: a) Obtain the necessary equation for IB Base current b) Find the quiescent (Q) point and show it on the VCE - Iccharacteristics figure. (show IBQ, ICQ, and VCEQ) c) Explain the effect of using RE, and collector feedbackon the transistor circuit. (Transistors are Silicon in all solutions)

- Explain the effect of base resistance and collector resistance on the circuit.

pls ans soon

2. Discuss and compare (by equations) between the relative levels of stability for the following biasing circuits: i. the fixed-bias circuit, ii. the emitter-stabilized bias circuit, iii. the voltage-divider bias circuit, and iv. the voltage-feedback circuit.

Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )

I need proper detailed step to step answer for this

(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics  (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.

For the common emitter configuration, the current amplification factor (B) is 90. What will be the value of the current amplification factor (a)? a. 0.5 b. 0.95 c. 0.978 d. 0.989

with the aid of a diagram describe a simple common emitter circuit with npn bipolar transitor and discus the relationship between base emitter voltage and base current

Exersice 4: For the Darlington amplifier circuit used in an emitter-follower configuration appears in figure below: . Determine the dc levels of Vi, Ve, Vi, Ves, and Ver. . Find the currents I, Iz, and Irz. . Calculate Zi and Zo. . Determine the voltage gain Ay = Vo/Vi and current gain Ai=IL/l;. . Repeat parts 1 to 4 with a load resistor of 1.2 kQ. . Evaluate A = Vo/Vs if the source has an internal resistance of 1.2 kQ and the applied load is 10 kQ. omAwWNE 416V L i prammm, I Tour i,

The DC Current Gain of a Transistor is Select one: a. Ratio of Collector Current to Base Current b. Ratio of Base Current to Collector Current c. Ratio of Emitter Current to Collector Current d. Ratio of Base Current to Emitter Current

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

1- Consider one Design or applications of MOSFET (can be as a small signal amplifier and digital switches) and explain its operation ?