ABSTRACT Ohms law

Can you help me set up my breadboard so I can ... Measure the values of base current, _________, collector current, _________ ?

Click Submit to complete this assessment. Question 10 Extrinsic semiconductors are having more charge carriers than intrinsic semiconductor. True False A Click Submit to complete this assessment. MacBook Pro

The polarization of an LED is similar to the polarization of the diode, but a current limiting resistor must always be connected in series with the LED. Both the LED and its current limiting resistor must be placed in series with the load. a) The above statement is correctb) The above statement is incorrect.

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Using the data in the photo, write a 5 sentence conclusion.

the data I've been researching is about solar panels so relate the answer to limitations to solar panel data

(02) DC Si Diode Circuit. (Course: Electronic Devices and Circuit Theory) What is the minimum value for RL needed to turn Zener diode ON?, And what is the maximum value for RL needed to turn Zener diode is ON? -Use Equation Operators or write it down on paper/digital paper. -Redraw and Apply. -You can add //comments for a better understanding. -Please answer without abbreviation. -Make it clean and clear typing/writing. Thank you.

2 - Which of the following methods cannot be used to determine the terminal names of the LED diode? A) Long connector ANOT, short connector KATOTB) Large plate KATOT inside diode, small plate ANOTC) The cut side in the diode body is KATOT, the other is ANOT.D) With the measuring instrument, the diode stage can be determined with +/- tip.E) Thick connector ANOT, thin connector KATOT

A series circuit is set up with an AA battery along with an mystery material and ammeter; however, there’s no current passing through. A.Insulator B.Conductor C.Semiconductor

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Question Completion Status: Moving to another question will save this response. Question 7 Extrinsic semiconductors are having more charge carriers than intrinsic semiconductor. True False A Moving to another question will save this response.

1. Caused by one or more cells not producing voltage. May be due to cheap construction, overheating or mechanical damage. A. Loss of active materials B. Internal Shorts C. Sulfation D. Internal Corrosion 2. Result of excessive depth of discharge and age. Mostly a problem with cheaper batleries. A. Loss of active materials B. Internal Shorts C. Sulfalion D. Internal Corrosion 3. The unit of measurement used for electrical pressure is- A. ohm B. volt C. energy D. amperes 4. What will happen if a Solar module is not properly oriented? A. Nothing B. Power is reduced due to different solar position during each season C. Power is increased due to different solar position during each season D. All of the above 5. In taking the Voc, you should set the multi-meter : A. High to compensate for the power B. Low to compensate for the current C. Volts DC D. 20 A DC

Allow Vin to range from -10V to 10V and assume that the diodes are ideal. Determine the expression for Vo as a function of Vin, use "Vin" to represent Vin in the answer. R1=7kΩ, R2=7kΩ, R3=5kΩ.  a) For -10<Vin<0, Vo= _____ V b) For 0<Vin<10, Vo = _____ V

A fuse wire of circular cross-section has a radius of 0.8 mm. The wire blows off at a current of 8A. Calculate the radius of the wire that will blow off at a current of 1 A. Also calculate the Value of blow off current when radius is 0.5 mm

Recommend a way to modify the semiconductor, without changing the dimensions of the bar, so that the current flowing through the bar increases by 250% when the same voltage is applied. Justify your answer with your written statements and proof of calculations.

This multiple choice Questions from MEASUREMENTS INSTRUMENTATION course.

Moving to another question will save this response. Quèstion 2 The density of doping of zener diode is less than normal diode. True False Moving to another question will save this response.

The reverse voltage blocking capacity of a GTO is small due to the presence of______________. a. anode opens b. cathode opens c. anode shorts d. cathode shorts

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PROBLEM 2 Two semiconductor materials A and B shown in the given figure, are made by doping germanium crystal with arsenic and indium respectively. The two are joined end connected to a battery as shown in figure. Is the junction forward biased or reverse biased? A B

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If a Si diode at room temperature (25°) has a leakage current IS = 56 nA, k = 5,800, and VD = 0.58 V, The diode current is ___mA. No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.

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(01) DC Si Diode Circuit. (Course: Electronic Devices and Circuit Theory) -Use Equation Operators or write it down on paper/digital paper. -Redraw and Apply. -You can add //comments for a better understanding. -Please answer without abbreviation. -Make it clean and clear typing/writing. Thank you.

help me in these questions pls write the questions with the and by (Computer)1- Explain how the circuit below works to perform its main function?i. Zener diode is short circuited when voltage across it rises beyond its breakdown voltage.ii. Radiation from light emitting diode is detected by a phototransistor without having any physical contact.iii. The circuit prevents the LED from having the wrong polarity or too high voltage.iv. The circuit prevents the alternating signals by rectifying it using a diode. a. All the answers. b. i, ii and iii only. c. i, iii and iv only. d. i, ii and iv only.========2- Which of the following statement is most probably INCORRECT in explaining the working principle of an engine management system? a. Microprocessor is used to process incoming signal including position, speed, timing, flow, and temperature. b. The operation of valves and spark ignition is in sequence following the stroke action. c. The timing of the sequence is fixed.…

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Draw the energy band diagram of the solar cell following the solar cell diagram below. Indicate the contact, semiconductor material type, Ev, Ec, Ei and Eg in the diagram. Front contact Rear contact N type silicon P type silicon

Plzz solve  as fast  It is an Electronics and Semiconductor question