Discussion Week 3 - Moore's Law

I-V Characteristics of NMOS device: The following graph shows the I-V characteristics of an NMOS device. Answer the following questions:                         [10]   A. Find out the three regions of operation (linear, saturation, and cut-off) of the following graph and give a brief explanation of them by using the different operating modes (accumulation, depletion, and inversion).    B. In the graph, the saturation voltages from drain-to-source increase with increasing gate-to-source voltages. Give a brief explanation of why: Vds(sat,A)<Vds(sat,B)<Vds(sat,C)

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the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region?

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1-Write the characteristics of NTC.? 2-Draw the Characteristic curve of PTC.?

The mode of operation for the D-MOSFET is Select one: a. the ohmic region only b. the enhancement mode only c. both the depletion and enhancement modes d. the depletion mode only

There are three different main semiconductor devices of FETs which are JFET, D-MOSFET, and E-MOSFET. All of them are also known as active semiconductor devices. i)  Briefly explain the different between JFET and D-MOSFET. ii) Given that Vp = - 6 V and IDSS = 10 mA. Draw the transfer characteristics of n-channel JFET using shorthand method. iii) State the general relationship of JFET, D-MOSFET, and E-MOSFET.

Thanks for the help This is about the integrated fabrication process for microelectronic devices for a bipolar n-p-n transistor; . Please work out the fabrication process flow. In each step of fabrication process, please illustrate the cross-section of the structure and indicate the material of each layer, the patterning of each layer and the process used.

figure 5 A With the help of the tiand theary only distinguish between an insulator and a semiconductor. b. L Draw a crcult dlagram that can be used to obtain the results shown on the graph in figure 5. IL Use the graph in figure 5 to plox another graph of collector current le agaiat base current Ig. Obtain the current gain for the transistor. III. Explain the tetm thermal runaway. Input Output R Figure 6 The input in figurr 6 is an alternating valtage. Draw the output voltage for the circult.

At high levels of gate current, the characteristics of an SCR approach those of what semiconductor device? a. MOSFET b. BJT c. JFET d. Diode

Please answer the question step by step and please care to explain the question in detailed with your own sentence and explain why you used that formula, calculations etc asap. Thanks in advance.

1) with the aid of a diagram briefly describe the process of photolithography used in the fabrication of monolithics ICs 2)  Explain the significance of the buried layer in npn transistor fabrication. 3) Draw the lateral view of  the layout of a lateral pnp transistor. Label all the diffusion regions. 4) state five differences between series regulators and switching regulators.

How does the construction of a transistor differ from the construction of a PN junction diode? What are the two types of transistors? What are the three parts of a transistor called? Draw and label the schematic symbols for an NPN and a PNP transistor. What are transistors used for? How are transistors classified? What symbols are used to identify transistors? What purposes does the packaging of a transistor serve? How are transistor packages labeled? What are the basic functions of a transistor? What is the proper method for biasing a transistor? What is the difference between biasing an NPN and a PNP transistor? What is the barrier voltage for a germanium and a silicon transistor? What is the difference between the collector-base junction and the emitter- base junction bias voltages? What may cause a transistor to fail? What are two methods of testing a transistor? When using an ohmmeter, what should the results be for an NPN transistor? What are the two…

For the common base connection of an npn silicon transistor, supply at emitter is 10 V and emitter resistance is 2.5 kΩ. The supply at collector side is 25 V and collector resistance is 2 kΩ. Draw the DC load line and find out the operating points. Draw the circuit. ..

Discuss the significance of Moore's Law in the context of microchips. How has the miniaturization of transistors and the increase in transistor density impacted microchip performance?

Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]

Identify two diodes (pn junctions) in a standard MOSFET structure. Can you identify a parasitic BJT as well? How should these diodes be biased (forward/reverse)? Based on your answer, comment on MOSFET biasing requirements for NMOS and PMOS.

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Suppose a transistor on an integrated circuit chip were 2 microns in size. According toMoore's Law, how large would that transistor be in 2 years? How is Moore's law relevant toprogrammers?

Question 3: A 2N6755 Harris n-channel MOSFET has a de supply voltage of 60-V, and a load resistance of 6-2. With a gate-source voltage of 10-V, the on-state resistance is 0.2-2. (a) Assuming that the MOSFET is acting as a simple on-off switch, determine the load power and efficiency. (b) The MOSFET above is now used in a 20-kHz chopper circuit. Assuming the parameters remain unchanged, calculate the load power and efficiency at a chopper duty cycle of 0.4.

Which one of the following statements regarding the two transistor model of PNPN in four layer device is correct. a. it explains only the turn off portion of the device characteristics b. it explains only the turn on portion of the device characteristics c. it explains all the regions of the device characteristics d. it explains only the negative region portion of the device characteristics Clear my choice

Explain the concept of Moore's Law and its impact on the microchip industry. Discuss the limitations and potential alternatives to sustaining the continuous increase in transistor density.

2.    Text Problems 4.4 and 4.8 for NMOS and Text Problem 4.47 for PMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.

In normal operation, the junctions of an n-p-n transistor are: a. base-emitter forward biased and base-collector reverse biased b. both reverse biased c. both forward biased d. base-collector forward biased and base-emitter reverse biased     The current flow across the base-emitter junction of an n-p-n transistor consists of a. equal numbers of holes and electrons b. the leakage current c. mainly electrons d. mainly holes