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Please help prove the 3 equations in the second attached image.

(b) Measure (using the DVM and oscilloscope) the voltage drop Vc across the capacitor and explain the operation of the circuit.   the voltage drop Vc across the capacitor is 4.61V please explain question b

In electronic circuits it is not unusual to encounter currents in themicroampere range. Assume a 35 μA current, due to the flow ofelectrons. What is the average number of electrons per second that flowpast a fixed reference cross section that is perpendicular to the directionof flow?

r) For the following figure, plot 1 is for (intrinsic / extrinsic) and plot 2 is for (intrinsic / extrinsic) semiconductor. semiconductor, Conduction electron concentration (102¹/m³) 2 O 0 200 400 600 T(K)

With regard to the n-type extrinsic semiconductors, which one of the following explanations is not correct?

A copper wire has a diameter of 2.05 mm and carries a current of 15 A due solely toelectrons. (These values are common in residential wiring.) Each electron has a charge of -1.60 x 10-19 C. Assume that the free-electron (these are the electrons capable of movingthrough the copper) concentration in copper is 1029 electrons/m³. Find the average velocity ofthe electrons in the wire.

D1 Vsecondary Vfiltered D2 V1 sine Rload I 120 VAC @ 60 Hz D3 10:1 - D4 Figure 1: Bridge Rectifier Voltage Regulator Circuit The filter capacitor C, is recharged on every half-cycle of V secondary. Given: Rioad = 100 N VDiodes = 0.7 V Vi is given in RMS What is the minimum value of capacitor C, required such that Vrutered does not drop below 8 V?

1. A Germanium sample is 5 mm long and has a rectangular cross-section, 50 μm by 150 μm. A Phosphorus atom with concentration of 4.4 x 10¹5/cm³ at 300 K is added and corresponds to one impurity atom for 107 Ge atoms. A steady current of 3 juA exists in the bar. a. Set up the equations for concentrations, conductivity, resistance, and voltage. b. Solve for the electron and hole concentration, conductivity, resistance, and voltage. 2. A basic junction diode is operating at a room temperature of 25°C and has a reverse current of 1 nA. a. Set up the different diode equations. b. Solve for the diode current at room temperature, reverse current, and threshold voltage when the temperature becomes 72°C.

Please explain and show me how to work the problem with the answer. Thank you!

How do you calculate a resulting VCPD voltage if you have a Kelvin probe energy diagram and Kelvin probe's work function in 7 eV? Let's say we have two metals: one metal has a work function of 7 eV and another metal has a work function of 3.2 eV. How would you calculate the VCPD voltage?

Notes: Answer all questions With All Necessary Details. Q. 1: The e electrical resistance of a P- N crystal is very high at the reverse biasing, explain why. Q.2: Draw and describe the electric charge density graph through a P- N crystal. Q.3: Explain with drawing why the majorities in the N- type semiconductors are the free electrons. Q.4: Explain why the saturation current depends on temperature.

a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.

The figure given below represents the energy-band diagram in the p-type semiconductor of a MOS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 µm. Then the acceptor doping concentration is x 10¹5 cm-3. (Assume Esi = 11.7 &&0 8.85 x 10-14 F/cm). Os = 0.254 V oxide Xd 0.30 μm p-type E Efi EF MM Ev

help me with this homework problem..thanks!

Using four LEDs: Red, Amber, Green and Blue connected in series to an 18Vsupply, determine the resistance to achieve the desired operating conditions forthe combination of 4 LEDs. Assume that the current is 25mA.

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Can you give me a proper explanation in a structured way?? Please use text to make it easy for me.

The electrons present in the valance band are loosely attached to the nucleus and have higher energy than the conduction band. Select one: True False

If the potential barrier to carrier diffusion is increased (in a diode) by the applied voltage, the type of bias used is Blank 1 bias. Blank 1 Add your answer The physical process that is responsible for the interactions between atoms and molecules is called a/an Blank 1. Blank 1 Add your answer In an intrinsic semiconductor, when a conduction-band electron loses energy and falls back into a hole in the valence band, it is called a/an Blank 1. Blank 1 Add your answer

InP is composed of equal atoms of indium and phosphorus in a lattice similar to that of silicon. (a) Suppose a germanium atom replaces an indium atom in the lattice. Do you expect the germanium atom to behave as a donor or acceptor impurity? Why? (b) Suppose a germanium atom replaces a phosphorus atom in the lattice. Do you expect the germanium atom to behave as a donor or acceptor impurity? Explain.

Which one of the following statements correctly describes the mobility of an electron? The mobility of an electron in a semiconductor is a measure of: how quickly it will recombine with a hole. the energy it emits when it recombines with a hole. the time between collisions with crystal defects. the diffusion of electrons across a piece of material how fast it will drift through a device per unit applied electric field.

For the semiconductor diode the "on" state will support a current in the direction of the in the symbol. Your answer The region of uncovered positive and negative ions is called the due to the diminution of free carriers in the region. (Two Words) Your answer What is the net flow of charge in the absence of an applied bias across a semiconductor diode? Your answer

Short answer. What happens to the resistance of a negative temperature coefficient material if its temperature increases? Use the editor to format your answer Short answer. What is the advantage of a semiconductor device if in the conduction of current there is no voltage drop across it? Use the editor to format your answer Short answer. Why a semiconductor diode is called a non-linear device? Use the editor to format your answer

answer 2

A current density of 5000 A/cm2 exists in a 0.02 Ω · cm n-type silicon sample. What is the electric field needed to support this drift current density?

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