An unknown semiconductor has bandgap energy Eg=1.2eV and Nc=N, (effective density of states in the conduction and valence bands are equal). It is doped with 1015 cm-3 donors. Assume that all donors are fully ionized. Given that EF is 0.25 eV below Ec, calculate n; (intrinsic carrier concentration) and the concentration of electrons and holes in the semiconductor at 300K. Also draw the simplified energy band diagram labelling the location of important energy levels. (k= Boltzmann constant (k=8.6x10SeV/K))
An unknown semiconductor has bandgap energy Eg=1.2eV and Nc=N, (effective density of states in the conduction and valence bands are equal). It is doped with 1015 cm-3 donors. Assume that all donors are fully ionized. Given that EF is 0.25 eV below Ec, calculate n; (intrinsic carrier concentration) and the concentration of electrons and holes in the semiconductor at 300K. Also draw the simplified energy band diagram labelling the location of important energy levels. (k= Boltzmann constant (k=8.6x10SeV/K))
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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