An unknown semiconductor has bandgap energy Eg=1.2eV and Nc=N, (effective density of states in the conduction and valence bands are equal). It is doped with 1015 cm-3 donors. Assume that all donors are fully ionized. Given that EF is 0.25 eV below Ec, calculate n; (intrinsic carrier concentration) and the concentration of electrons and holes in the semiconductor at 300K. Also draw the simplified energy band diagram labelling the location of important energy levels. (k= Boltzmann constant (k=8.6x10SeV/K))

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An unknown semiconductor has bandgap energy Eg=1.2eV and Nc=Ny (effective density of states in the
conduction and valence bands are equal). It is doped with 1015 cm 3 donors. Assume that all donors are
fully ionized. Given that EF is 0.25 eV below Ec, calculate n; (intrinsic carrier concentration) and the
concentration of electrons and holes in the semiconductor at 300K. Also draw the simplified energy band
diagram labelling the location of important energy levels. (k= Boltzmann constant (k=8.6x10SeV/K))
Transcribed Image Text:An unknown semiconductor has bandgap energy Eg=1.2eV and Nc=Ny (effective density of states in the conduction and valence bands are equal). It is doped with 1015 cm 3 donors. Assume that all donors are fully ionized. Given that EF is 0.25 eV below Ec, calculate n; (intrinsic carrier concentration) and the concentration of electrons and holes in the semiconductor at 300K. Also draw the simplified energy band diagram labelling the location of important energy levels. (k= Boltzmann constant (k=8.6x10SeV/K))
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