5. In a P-type germanium, nį =2.1 x 1019 m-3density of boranx 1023 atoms /m³. Theelectron and hole mobility arem² v14.50.4and0.2s-1respectively. Whatconductivity before and afteraddition of boron atoms.isits

before adding any impurity the semiconductor is intrinsic. Its conductivity is given by σ=nie(μe+μh)…

5. In a P-type germanium, n¡ 2.1 × 1019 m-³density of boran 4.5 x 1023 atoms /m3. The electron and hole mobility are m² 0.4 and 0.2 v1 -1 s-1 respectively. conductivity before and after addition of boron atoms. What is its

5. In a P-type germanium, n¡ 2.1 × 1019 m-³density of boran 4.5 x 1023 atoms /m3. The electron and hole mobility are m² 0.4 and 0.2 v1 -1 s-1 respectively. conductivity before and after addition of boron atoms. What is its

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 66P: For a one-dimensional crystal, write the lattice spacing (a) in terms of the electron wavelength.

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Concept explainers

The Bohr model

Students often get confused between Rutherford’s model and Bohr model of an atom. They interpret the postulates of both these models to be the same, which is incorrect. Rutherford’s model differs from Bohr’s model in the following ways:

Question

5. In a P-type germanium, nį =
2.1 x 1019 m-3density of boran
x 1023 atoms /m³. The
electron and hole mobility are
m² v1
4.5
0.4
and
0.2
s-1
respectively. What
conductivity before and after
addition of boron atoms.
is
its

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