Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(N.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 Cm^3, un=1200 * .Cm2/V.sec & up=400Cm^2/V.sec

Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(N.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 Cm^3, un=1200 * .Cm2/V.sec & up=400Cm^2/V.sec

Intro Spectroscopy

5th Edition

ISBN:9781305221796

Author:PAVIA

Publisher:PAVIA

Chapter11: Combined Structure Problems

Section: Chapter Questions

Problem 24P

See similar textbooks

Related questions

Q: Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

Q: Q.2] A silicon p-i-n photodiode with an area of 1.5 mm? is to be used in conjunction with a load…

Q: How hot is a metal being welded if it radiates most strongly at 440 nm? Answer should be in terms of…

A: Wein's Displacement law gives us T=2.90×10-3 mKλpeak

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: Given:- intrinsic carrier concentration ( ni ) = 1 x 1016 electron/m3 The doping concentration (…

Q: Diodes are frequently used as temperature sensors. An experiment is set up in the lab and 20% of the…

A: diode conduction formula is I=I0eqVkT-1

Q: The maximum power dissipation of a transistor is 100mW. If VCE = 20V, what is the maximum collector…

Q: Find the diffusion coefficients of holes and electrons for germanium at 290.25K. The carrier…

A: Diffusion coefficient of electrons is, De=μekTe=5050 cm2/V-s1.38×10-23 J/K290.25 K1.6×10-19…

Q: Calculate the drift current density in a gallium arsenide sample at T-300 K, with doping…

A: Given that the value of mobility of hole and mobility of electron and temperature and doping…

Q: A germanium diode is used to detect radiation with energy of 1.6 MeV. To do so, the anode (positive…

Q: if ro is the radiys of sphere contains one electrons in electron gas, proved that coulomb self…

A: Given, Radius of the sphere, ro Self-energy of the sphere contains electron, is the work done to…

Q: What is the electrostatic potential at the surface of d silver nucleus of diameter 12.3 fermi ?…

Q: An HCl molecule vibrates with a natural frequency of 8.1 x1013 Hz What is the difference in energy…

A: Frequency, f = 8.1 x1013 Hz

Q: A 12.5m long wire (radius=1.2mm), operating through a constant potential difference of 12volts, is…

Q: (5.19) A laser diode emits at 830 nm when operating at an injection current of 100 mA. (a) Calculate…

A: Given data: λ = 830nm = 830×10-9m I = 100mA =10-1A

Q: The number of silicon atoms per m³ is 5 x 1028. This is doped simultaneously with 5 x 1022 atoms per…

Q: The exchange current densities for a hydrogen-evolution reaction on three different metals are 5x10…

A: current densities for a hydrogen-evolution reaction on three different metals are 5x10* A/cm², 3x107…

Q: Calculate (a) the thermal wavelength, (b) the translational partition function of an Ar atom in a…

Q: A silicon wafer is doped with 5x1020 phosphorus atoms/m³. Calculate the hole concentrations after…

Q: H.w/ find the 0/p of PCM for i/p signal x(t) = 3.5sin(2000nt), the sampling frequency 5 kHz for…

A: We have givenInput signal x(t)=3.5sin(2000πt)andSampling frequency (f)= 5 kHzQuantization level=8We…

Q: Calculate the drift current density in a gallium arsenide sample at T-300 K, with doping…

A: Given : Temperature, T = 300 K Doping concentration, NA = 0 and Nd = 1×1022 m-3 =…

Q: | Find the resistivity at 300 K for a Si sample doped with 1.0x10 cm' of phosphorous atoms, 8.5x 102…

A: Write the given value of this problem. Phosphorus atom=1×1014 cm-3Arsenic atom=8.5×1012 cm-3Boron…

Q: Show that Kp = 0.75 nM is a DG = -50.8 kJ/mol. Express DG in terms of pN nm Compare the force…

A: Given: KD=0.75 nM=0.75×10-9m ∆G=-50.8 kJ/mol

Q: Calculate the density of thermionic emission current in Cs at 500 ,1000 ,2000 k°.

A: The required density of thermionic emission current at 500 K is, The required density of thermionic…

Q: Using linear interpolation method, identify the indium content of in,Ga 1 As which has a bandgap…

Q: Calculate holes and electrons concentration in compensated silicon p-type sample. If T=300 K,…

A: Solution: The electron concentration for p-type semiconductor at 300K is given by:…

Q: The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per…

Q: At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43…

A: Electron mobility: e = 0.43 m2/Vs Hole mobility: h = 0.21 m2/Vs Electron concentration = Hole…

Q: Calculate the yan der Waals second viral coefficient (B) using Zy at 335.6 K, where Z is given as…

A: Given : Zvdw = 335.6 K Vm = 132.6cm3/mol = 1.326m3/mol

Q: Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic…

A: First of all, we have to write down the given conditions, ni = 2×1016 electrons/m3Np = 3×1016…

Q: Q3. Consider an n-type silicon photoconductor which is 0.1 cm long, 1µmthick and 50 umwide. If the…

A: Given: An n type silicon photo conduction value is 1μm thick, 50 μm wide. The longitudinal dimension…

Q: In laser eye surgery, the laser emits a 1.45-ns pulse focused on a spot that is 32.5 mm in diameter.…

Q: The exchange current density of Pt / H: , H° (aq) is 0.79 mA/cm. What current will flow through…

A: Given data: Exchange current density is io=0.79 mA/cm2. Potential drop is η=5 mV=0.005 V.…

Q: Based on the principle that the bility of stimulated emission is to the probability of absorption,…

Q: Suppose you know a material is p-type, and that the thermal equilibrium electron concentration is no…

A: Given:- The thermal equilibrium electron concentration is no = 2.0 x 1010 cm-3. Find:- What can you…

Q: A hydrogen isotope separator contains positively ionized hydrogen H^1, with isotope of hydrogen,…

A: Isotopes of hydrogen. H11, D121, H231 md = 2 x 1.67 x 10-27 kg , ∆V = 200V, q = 1.6 x 10-19 C, u…

Q: A sample of Ge at 300K has a uniform donor concentration of 2 x 1013cm3. The excess carrier lifetime…

Q: : find the relaxion time for electron if the mobility of ele 00cm²v's' and the / m, =0.26?

A: The relaxation time is given as T = u M/e Where u is mobility of electron M is mass of electron E is…

Q: A silicon wafer is doped with 5x1020 phosphorus atoms/m³. Calculate the hole concentrations after…

Q: The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per…

A: Given : Number of silicon atoms, N = 5 × 10 28 atom/m3 Number of arsenic atoms, nAS = 5×1022atom/m3…

Q: A sample of Si at 300 K doped with 1016 cm3 Boron, with recombination lifetime 3 us. It is exposed…

A: We have givenSi at 300 k doped with 1016 cm-3 Boron Lifetime=3 μsGeeneration rate =1020 / cm3/s

Q: A GaAs sample with nna = 1015 cm-3 is illuminated with light and 1013 electron-hole pairs/cm? are…

Q: A 10 monolayers thick layer of Ag is deposited on Mo. The intensity of electrons emitted by the Ag…

A: Given: 10 monolayer of thick layer of Ag is deposited on Mo Ratio of…

Question

Find the concentration of electrons &
holes in (a) N-type Si at 300K, if the
conductivity is 300(N.cm)^-1. (b) Also
find these values for P-type Si. Given
ni=1.5x10^12 /Cm^3 , µn=1200
* .Cm2/V.sec & up=400Cm^2/V.sec

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Given data

VIEW

Calculation

VIEW

Step by step

Solved in 2 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

Calculate the number of Frenkel defects per cubic meter in potassium chlorideat 500degC. The energy required to form each Frenkeldefect is 2.6 eV, whereasthe density for KCl is 1.955 g/cm3.
A sample of Si is doped with 10' phosphorus atoms /cm® , find the Hall voltage in a sample with W=500 pm, A=0.25 mm?, I= 1mA, and B,=10* Wb/cm?.
At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43 and 0.21 m2/V s, respectively. If the electron and hole concentrations are both 2.3 x 10'® m, find the conductivity at this temperature.
In an isolated conducting wire, although conduction electrons are available, there will beno current. Why? (b) A 6.0-MeV beam of protons has a density of 2.6 × 1011 m-3 and anarea of 1.9 mm2 . What is the beam current? (proton mass = 1.67× 10-27 kg)
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni = 1.5 × 1016 m-3. Is the material n-type or p-type?
The 10-fold X-ray reduction values for (a) water, (b) concreate, (c) iron and (d) lead are equal 100 cm, 20 cm, 10 cm and 5 cm, respectively. Find corresponding values of linear attenuation coefficients.
Using the given charge-to-mass ratios for electrons andprotons, and knowing the magnitudes of their charges areequal, what is the ratio of the proton’s mass to the electron’s?(Note that since the charge-to-mass ratios are given to onlythree-digit accuracy, your answer may differ from theaccepted ratio in the fourth digit.)
Plz choose the correct answer with reason 6- The width of the depletion region isa. Directly proportional to the dopingb. inversely proportional to the dopingc. Independent of dopingd. None of the above
The Type K thermocouple has a sensitivity of about 41 micro-Volts/℃, i.e. for each degree difference in the junction temperature, the output changes by 41 micro-Volts. If you have a 32-bit ADC, what is the smallest temperature change you can detect if the ADC range is 10 V? Try leaving the answer as a decimal with significant digits: e.g., 0.00004100.
Say that the surface of a star has a temperature of 6000 K and an electron density of n = 2.6 x 1019 electrons per m3. Using the Saha equation, what fraction of hydrogen atoms is ionized?
I need answer for nmbr 2
If the acceleration voltage is 150 kV, calculate the half-life thickness knowing that the 10% reduction thickness is 0.256 mm.