8. A pure silicon contains 5 x 1028 atom per cubic meter and the ratio of broken bonds are one bond per 1012 silicon atom at 38°C. What is the ratio of broken of covalent bonds if the temperature raised to 75°C, where E, = 1.1 eV? %3D
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- What is CEMF?A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)If the Fermi level in impure silicon is 0.4 eV above the center of the gap at a temperature of 300 K, where Eg = 1.1 eV and * ni = 1.45 x 1016 / m, what kind of impurities are there and what is their concentration?
- Silicon is doped with ND= 2 × 1015 impurity atoms/cm3 . Assume the electron and hole mobilities for the given impurity are un = 1320 cm2 / V.s, and up=460 cm2 /V.s respectively. Use ni = 1.5 × 1010/cm3 Calculate the resistivity of silicon. Assume an aluminum line runs diagonally from one corner of a 20 mm × 20 mm silicon material to the other corner. What is the resistance of this line if it is 1 μm thick and 5 μm wide? The resistivity of pure aluminum is 2.82 μΩ-cm.A lightly-doped p-type Si region has a hole concentration of 1*10^11 cm-3 at a temperature of 320 K. Assume the hole mobility is 470 cm^2/Vs and the electron mobility is 1430 cm^2/Vs at 320 K. The bandgap of Si is 1.12 eV. Calculate the resistivity of this Si region at 320 K.A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
- This problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25×10^15" cm" arsenic sample b: 10^16 cm boron, 5x10^15 cm phosphorous sample c : intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility He is 1600 cm /.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier concentration n, is (1/352) x10^10 cm.a- Find the resistivity in (Ω.cm) of sample a. b- Find the conductivity in (Ω.cm)-1 of sample bc- find the resistivity in (Ω.cm) of sample c.The velocity of electrons in an intrinsic silicon material is 80 m/s at a certain temperature. The silicon whose length is 5 cm is subjected to an electric field of 10 volts. Determine the mobility of the electrons in the silicon. (unit must use units in the range of centimeters not meters, Volts and seconds - 2 decimal places)P-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm² .The accepter concentration is 5x10^18 holes/cm³. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.ni=10^10.
- A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?In a certain semiconductor, the Fermi energy lies above the top of the valence band by an amount equal to 3 4 of the band gap. Find the probability that a state at the bottom of the conduction band is occupied if the band gap is 0.300 eV and the temperature is 275K.