A uniform bar of n-type silicon of 2 µm length has a voltage of 1 V applied across it. If Nɔ = 10"/cm’ and 4, = 1350 cm/V's, find (a) the electron drift velocity. (b) the time it takes an electron to cross the 2-jum length, (c) the drift-current density, and (d) the drift current in the case the silicon bar has a cross sectional area of 0.25 µm" Ans. 6.75 x 10° cm/s; 30 ps; 1.08 x 10°A/cm"; 27 µA 16 %3D 3 „Hm". 2'

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A uniform bar of n-type silicon of 2 µm length has a voltage of 1 V applied across it. If
Nɔ = 10"/cm’ and 4, = 1350 cm/V's, find (a) the electron drift velocity. (b) the time it takes an
electron to cross the 2-jum length, (c) the drift-current density, and (d) the drift current in the case
the silicon bar has a cross sectional area of 0.25 µm"
Ans. 6.75 x 10° cm/s; 30 ps; 1.08 x 10°A/cm"; 27 µA
16
%3D
3
„Hm".
2'
Transcribed Image Text:A uniform bar of n-type silicon of 2 µm length has a voltage of 1 V applied across it. If Nɔ = 10"/cm’ and 4, = 1350 cm/V's, find (a) the electron drift velocity. (b) the time it takes an electron to cross the 2-jum length, (c) the drift-current density, and (d) the drift current in the case the silicon bar has a cross sectional area of 0.25 µm" Ans. 6.75 x 10° cm/s; 30 ps; 1.08 x 10°A/cm"; 27 µA 16 %3D 3 „Hm". 2'
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