cond pure silicon is 4 8 potential at 300°K, if the µn = 2.4µp? %3D

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn
junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find
the barrier potential at 300°K, if the µn = 2.4µp?
Transcribed Image Text:The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?
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