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- Explain the two types of MOSFETs (draw the physical structure as well). Also explain themajor difference between them regarding mode of operation?In what ways are integrated circuits distinct from transistors?Explain the concept of power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) and Thyristors. How do these devices enable efficient power control and switching in high-power applications?
- Explain in which type of Voltage-Divider configurations (with or without emitter capacitor CE) have best voltage gain?To make Bipolar Junction Transistor conductive the current must go through?Bipolar Junction Transistor Briefly discuss the results of the circuit on the table, and the resulting graph below. Does the graph follow the characteristics curve of the transistor?
- QUESTION 2a) How would you characterise power bipolar devices in comparison with power MOSFETs? Illustrate your answer by providing unique features of power MOSFETs. b) Using the aid of a MOSFET diagram, explain operational features of the power MOSFET. Support your explanation using MOSFET operation as a switch. Also, illustrate the conditions needed to drive a power MOSFET in the different regions of operation. c) Discuss four (4) advantages of a bridge or half-bridge forward converter when compared with a single-ended forward converterAn NPN transistor with voltage divider bias as shown in the figure have the following parameters: βdc = 100 VCC = +10V, RC = 1k Ω, RE = 560 Ω; R1 = 10k Ω, R2 = 5.6k ΩDetermine Rin(base) in kilo ohms, VB in volts, VE in volts, VCE in volts IE and IC in milliampere.SHOW COMPLETE SOLUTION (ANSWERS MUST IN 2 DECIMAL PLACES)If a sinusoidal voltage is applied to the base of a biased npn transistor and the resulting sinusoidal collector voltage is cut to near zero volts, what is the state of the transistor? Please select one: a. answers B and C b. interrupted drive c. answers A and C d. forced into nonlinear operation e. drifting into saturation