(a) Doping concentration increases in n-type semiconductor (b) Doping concentration increases in p-type semiconductor (c) E-field is directed from n to p (d) E-field is directed from p to n (e) The width of depletion region t () The width of depletion region (g) Drift current (lent) is larger than the diffusion current (lanunon) (h) Diffusion current (laon) is larger than the drift current () (1) Minonty carrier density increases Minority carier density decreases lan D回A篇: VR Fig. 1
(a) Doping concentration increases in n-type semiconductor (b) Doping concentration increases in p-type semiconductor (c) E-field is directed from n to p (d) E-field is directed from p to n (e) The width of depletion region t () The width of depletion region (g) Drift current (lent) is larger than the diffusion current (lanunon) (h) Diffusion current (laon) is larger than the drift current () (1) Minonty carrier density increases Minority carier density decreases lan D回A篇: VR Fig. 1
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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O:45) Select all correct statements for a pn junction under reverse bias as shown in Fig.1.
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