(a) Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full ionization in this case. 1 (b) When EF touches intrinsic Fermi energy EFi, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case? Don,t copy from anywhere.

(a) Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full ionization in this case. 1 (b) When EF touches intrinsic Fermi energy EFi, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case? Don,t copy from anywhere.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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