A heavily doped n-typed semiconductor has thefollowing data:Hole-electron mobility ratio : 0.4Doping concentration : 4.2 x 10° atoms/m3Intrinsic concentration : 1.5 x 104 atoms/m3The ratio of conductance of the n-type semi-conductor to that of the intrinsic semiconductorof same material and at the same temperatureis given by

The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio : 0.4 Doping concentration : 4.2 x 10° atoms/m³ Intrinsic concentration : 1.5 x 10* atoms/m3 The ratio of conductance of the n-type semi- conductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

A heavily doped n-typed semiconductor has the following data: Hole-electron mobility ratio : 0.4 Doping concentration : 4.2 x 10° atoms/m³ Intrinsic concentration : 1.5 x 10* atoms/m3 The ratio of conductance of the n-type semi- conductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

How many valence electrons are generally contained in materials used for insulators?
How is a solid-state diode tested? Explain.
A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 ??−3 at 300 K.a. Given its electron and hole mobilities, calculate its intrinsic electrical conductivity which are 3900 ??^2/?? and 1900 ??^2/?? respectively.
An n-type semiconductor sample has an electron density of 6.25 x 10 ^ 18 / cm ^ 3 at 300K. If the concentration of the carriers in this example is 2.5 x 10 ^ 13 / cm ^ 3, what is the hole density at this temperature?
Draw band diagrams for below contacts. a) metal-n-type semiconductor for Φm< Φs b) metal-n-type semiconductor for Φm> Φs c) metal-p-type semiconductor for Φm< Φs d) metal-p-type semiconductor for Φm> Φs Clearly specify type of contact, Schottky barrier, built-in-potential and the depletion width in the band diagram
An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?
N-type Si, GaAs and 4H SiC are all doped to the level of ND = 10^17 cm-3. Determine the volumes of each of these semiconductors that will in average contain 1 hole. The intrinsic carrier concentrations are 1.02 × 10^10 cm-3, 2.1 × 10^6 cm-3 and 10-7 cm-3, respectively. show your calculations steps.
Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
Which of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.
An n-type semiconductor with direct band structure (Eg = 2.5 eV) is applied with a DC voltage shown below. (i) Schematically draw the band diagram for this semiconductor under this DC voltage. (ii) Calculate the longest wavelength in light absorption from this n-type semiconductor with applied DC voltage.
A uniform piece of n-type Silicon (Si) is 20 nm long and 1 V voltage is applied across it. If the drift velocity of the electrons inside this semiconductor is 2.5x104 m/s, then estimate the mobility of the electrons.
Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: Germanium Temperature: 206 (K)