Consider a p-n junction at room temperature. Doping concentration in the n and p regions is Np = 1-1017 cm 3 and NA = 4-1017 cm 3, respectively. Calculate the position of the Fermi energy level in the p-type semiconductor relative to the valence band edge. Give your answer in eV. If needed, use the following values for material parameters: Nc = 2.8· 1019 cm 3 Ny = 10.1019 cm 3 n; = 1.5 1010 cm-3 %3D kT = 26 meV EG = 1.1 ev %3! Your Answer: Answer units

Consider a p-n junction at room temperature. Doping concentration in the n and p regions is Np = 1-1017 cm 3 and NA = 4-1017 cm 3, respectively. Calculate the position of the Fermi energy level in the p-type semiconductor relative to the valence band edge. Give your answer in eV. If needed, use the following values for material parameters: Nc = 2.8· 1019 cm 3 Ny = 10.1019 cm 3 n; = 1.5 1010 cm-3 %3D kT = 26 meV EG = 1.1 ev %3! Your Answer: Answer units

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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