A semiconductor can be made into thermistors since their superior temperature sensitivity of conductivity. Consider a wire 0.5 mm in diameter and 10 mm long made of intrinsic silicon. If the resistance of the wire can be measured to within 103 ohm, calculate the temperature sensitivity of this device at 300K. At 300K conductivity of silicon is 4x10-4 ohm1 m1. The band gap is 1.107 eV.

A semiconductor can be made into thermistors since their superior temperature sensitivity of conductivity. Consider a wire 0.5 mm in diameter and 10 mm long made of intrinsic silicon. If the resistance of the wire can be measured to within 103 ohm, calculate the temperature sensitivity of this device at 300K. At 300K conductivity of silicon is 4x10-4 ohm1 m1. The band gap is 1.107 eV.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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