Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to O add impurity increase the resistivity apply heat None of the them

Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to O add impurity increase the resistivity apply heat None of the them

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.
The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)
Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? A)Si diodes have lower PIV and wider temperature ranges than Ge diodes. B) Si diodes have lower PIV and narrower temperature ranges than Ge diodes. C) Si diodes have higher PIV and narrower temperature ranges than Ge diodes. D) Ge diodes have lower PIV and smaller temperature ranges than Si diodes.
A semiconductor junction diode, we can say that: a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P.b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N.c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode.d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts.e) None of the above options is correct. Choose one of the alternatives
Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and wider temperature ranges than Ge diodes. Ge diodes have lower PIV and smaller temperature ranges than Si diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and narrower temperature ranges than Ge diodes.
A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?
Which of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.
a) With the aid of illustrations and using Silicon, describe what an intrinsic semiconductor material is. (b) With the aid of illustrations and using Silicon, describe what an extrinsic N type semiconductor material is. (c) With the aid of illustrations and using Silicon, describe what an extrinsic P type semiconductor material is. (d) With the aid of illustrations, describe what happens when P and N materials are joined/fused together and what is formed across the join. Then describe and illustrate how the formation at the junction can be controlled. (e) Give clear illustrations of characteristics for GERMANIUM and SILICON DIODES and say what is the threshold value (Vt) for Silicon and Germanium.
Given the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.
A 1N4733 zener diode has a Zz of 7 ohms. Considering the data of the manufacturer's hona, the Vz = 5.1 V with a test current, Iz, of 49 mA. What is the voltage across the zener terminals when the current is 65 mA? When the current is 25 mA? Include the graph where these values are shown.
For a diode connected NMOS, determine the required drain to source voltage (in V) to produce a drain current of 7.42 μA. Assume the following specifications for the NMOS: k = 8.84 μA/V2, W/L = 2, VTH = 0.7 V, LAMBDA = 0 V-1. Express your answer using 3 decimal places.
We wish to design a Si p+-n diode such that the avalanche breakdown and punchtrough at 300 K both occur at 15 V. Assume the relative dielectric constant of the semiconductor is 10, V0 is 0.5 and the breakdown field is 1 MV/cm. Determine the width and doping of the n-region.