A thermal oxide of thickness 100 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1150 C, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of .5um. Calculate the time taken to obtain the additional thickness.

Question
A thermal oxide of thickness 100 nm needs to be grown on a silicon wafer (100) in dry
oxygen. If the process integration issue requires having a temperature not higher than
1150 C, determine the time required to obtain the desired thickness. The wafer is put back
into the furnace and used with steam to obtain a total thickness of .5um. Calculate the
time taken to obtain the additional thickness.
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Transcribed Image Text

A thermal oxide of thickness 100 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1150 C, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of .5um. Calculate the time taken to obtain the additional thickness.

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