An N-type sample of silicon has uniform density (N = 1019 cm ³) of arsenic, and a P-type silicon sample has a uniform density (N₁ = 10¹5 cm-³) of boron. For each sample, determine the following: (a) The temperature at which the intrinsic concentration ni exceeds the impurity density by factor of 10. (b) The equilibrium minority-carrier concentrations at 300 K. Assume full ionization of impurities. (c) The Fermi level relative to the E, or E, in each material at 300 K. (d) The electron and hole concentrations and the Fermi level if both types of impurities are present in the same sample.

An N-type sample of silicon has uniform density (N = 1019 cm ³) of arsenic, and a P-type silicon sample has a uniform density (N₁ = 10¹5 cm-³) of boron. For each sample, determine the following: (a) The temperature at which the intrinsic concentration ni exceeds the impurity density by factor of 10. (b) The equilibrium minority-carrier concentrations at 300 K. Assume full ionization of impurities. (c) The Fermi level relative to the E, or E, in each material at 300 K. (d) The electron and hole concentrations and the Fermi level if both types of impurities are present in the same sample.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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