Consider a p+ -n Si diode with NA = 1018 cm -3 and ND = 1016 cm -3 . The hole diffusion coefficient in the n-side is 10 cm2 /s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2 . Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.

Consider a p+ -n Si diode with NA = 1018 cm -3 and ND = 1016 cm -3 . The hole diffusion coefficient in the n-side is 10 cm2 /s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2 . Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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Consider a p⁺ -n Si diode with N_A = 10¹⁸ cm ^-3 and N_D = 10¹⁶ cm ^-3 . The hole diffusion coefficient in the n-side is 10 cm² /s and carrier lifetime τ_p =10^-7 s. The device area is 10^-4 cm² . Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.

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