An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature. Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.
An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature. Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.
Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
10th Edition
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Russell E. Smith
Chapter12: Electronic Control Devices
Section: Chapter Questions
Problem 14RQ
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An n-type silicon (Si) is produced by doping with phosphorus (P). The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature. Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.
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