Answer the following questions:(a) The electron density for an intrinsic semiconductor was measured at (55 ●C)and was found to be (1.65 ×10'5) m³, While at (190° C) became (3.65 ×101º) m³,if we consider that Ee, Ey and E, are constants; find Eg for this material.(b) A pure silicon Atoms was adopted with (AS) with density equal to (3.8×10")m3 .Determine the density of both electrons and holes for the silicon afterdoping, when the temperature is equal to (77° C) and (177° C) if the carrierdensity equal to (1.25×10'5) m³³ at (77° C). Take Eg equal to (1.1 ev).(c) Determine the position of the fermi level, with respect of the mid of energygap, for a pure semiconductor, if Eg = (2ev), n¡ = (1.65 ×10") m3, T =(350)ok andNo =(3.7×1025) m³.

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Answer the following questions: (a) The electron density for an intrinsic semiconductor was measured at (55 C) and was found to be (1.65 ×10!5) m³, While at (190° C) became (3.65 ×10'º) m³, if we consider that Ec, Ey and Eg are constants; find Eg for this material. (b) A pure silicon Atoms was adopted with (AS) with density equal to (3.8×10º) m3 .Determine the density of both electrons and holes for the silicon after doping, when the temperature is equal to (77° C) and (177° C) if the carrier density equal to (1.25×10'5) m³³ at (77° C). Take Eg equal to (1.1 ev). (c) Determine the position of the fermi level, with respect of the mid of energy gap, for a pure semiconductor, if Eg = (2ev), n¡ = (1.65 ×10'') m³, T =(350)ok and N =(3,7x1025) m3. %3D %3D

Answer the following questions: (a) The electron density for an intrinsic semiconductor was measured at (55 C) and was found to be (1.65 ×10!5) m³, While at (190° C) became (3.65 ×10'º) m³, if we consider that Ec, Ey and Eg are constants; find Eg for this material. (b) A pure silicon Atoms was adopted with (AS) with density equal to (3.8×10º) m3 .Determine the density of both electrons and holes for the silicon after doping, when the temperature is equal to (77° C) and (177° C) if the carrier density equal to (1.25×10'5) m³³ at (77° C). Take Eg equal to (1.1 ev). (c) Determine the position of the fermi level, with respect of the mid of energy gap, for a pure semiconductor, if Eg = (2ev), n¡ = (1.65 ×10'') m³, T =(350)ok and N =(3,7x1025) m3. %3D %3D

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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