The hole concentration in a germanium semiconductor at T = 300 K is po = 2 X 1016 cm -3 a) Determine the position of the Fermi level with respect to the valence band energy level b) Determine the electron concentration c) Is the material n-type or p-type?

The hole concentration in a germanium semiconductor at T = 300 K is po = 2 X 1016 cm -3 a) Determine the position of the Fermi level with respect to the valence band energy level b) Determine the electron concentration c) Is the material n-type or p-type?

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Related questions

Q: 1-If you know that the Fermi level is below the conduction band by 0.25eV and that the energy gap of…

Q: 1. The following data is available for an undoped semiconductor: n; = 1010 /cc, T = 300 K, N. = 3 x…

A: According to the question, for an intrinsic semiconductor ηi=1010 cm-3T=300 K0;Nc=3×1019…

Q: A pure silicon is doped with 1019 boron per cm at room temperature if m, = 0.8mo calculate %3D (0)…

Q: For a silicon crystal doped with boron, what must be N_A if at T = 300 K the electron concentration…

A: The solution is given below

Q: The hole concentration in silicon varies linearly from x = 0 to x = 0.01 cm. The hole diffusion…

A: This question is from "Advance Analog Electronics". Under which we are going to study the…

Q: c) In a N-type semiconductor bar the fermi level is 0.4 eV below the conduction band at the…

A: Given, The Fermi level of an n-type semiconductor at temperature 298K is below the conduction band,…

Q: Find the type and electron and hole concentrations in a silicon sample at room temperature if it is…

A: Boron concentration= 1016/cm3 Phosphorus concentration= 2×1015/cm3 The equilibrium hole…

Q: Q6: Determine the probability f (E) for electrons occupied in conduction band at 300°K, considering…

Q: For a particular semiconductor sample, hole concentration po = 1013e¬*/Lr cm³ for x 2 0, Lp = 2 ×…

A: We know formula for current density .

Q: piece of crystalline silicon is doped uniformly with phosphorus atoms. The doping density is 1x 1015…

Q: The Fermi level of the P-Type semiconductor is located at O a. none of the other answers O b. The…

Q: A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K…

A: The boron concentration in Si wafer is: (1). At temperature T = 0 K, the Si wafer acts as an…

Q: how much is the nominal current with which a LED diode with semiconductor material (wavelength) LED…

A: (LED)light emitting diode is an electric component which emits light if the electric current flows…

Q: A silicon wafer (n;=1.388×10'6 atoms / m³) is doped with 4.50 × 10" boron atoms/m at 27°c. The…

Q: Calculate o for pure gallium arsenide (GaAs) if only three electron liberated from 10^14 valence…

A: By using the formula of conductivity σ= q*ni*(un+up). Every thing is given in question just put in…

Q: Which of the following has the maximum Energy gap between conduction band and valence band? O None O…

A: The bandgap is the energy gap between the valence band and conduction band or between the free state…

Q: |Q2:- Determine the values of no and po for silicon at T = 400 K, if the Fermi energy is 0.22eV…

Q: QUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=10" cm-. Determine…

Q: Consider a silicon crystal at 27° C doped with atoms at a concentration of Na = 10" cm 1- Calculate…

A: given Nd = 1017 cm-3 μn=800 cm2/V.s for silicon ηi=1.5 * 1010 cm-3

Q: Question 4 If a pure ("intrìnsic") semiconductor material is heated, the thermal energy liberates…

A: In pure intrinsic semiconductor, the concentration of electrons is equals to concentration of holes.…

Q: Estimate the ratio of the electron densities in the conduction bands of gallium arsenide (Eg 1.42…

A: The electron density in the conduction band is, ne=4.83×1021T32e-Eg3KT (e/m3) The given data's are,…

Q: 1. The following data is available for an undoped semiconductor: n, 1010 /cc, T= 300 K, N. = 3 x 10"…

Q: 7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram…

A: “Since you have asked multiple questions, we will solve the first question for you. If you want any…

Q: The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density…

A: Given data, The value of maximum drift velocity is 107 cm/s. The value charge density is 0.4 C/cm3.…

Q: Semiconductors having band gap near 1.5 eV are preferred for solar cells because, select the best…

A: High band gap cells in the range of 1.5 eV absorb more number of photons from sun radiation as…

Q: Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if…

Q: 27 - Which of the following is obtained when atoms with 3 electrons in the final orbit are added to…

A: Pure semi conductor has four electrons in the final orbit. when a atom with three electrons in its…

Q: Germanium doped with 104 m* Al atoms is a semi-conductor at room temperature and ch Al atom creates…

A: Germanium is a group-14 element and it is a pure semiconductor. Its conductivity is low at room…

Q: Explain with the help of band structure diagrams why the following operations can result in the…

A: Ans (a) The conductivity of semiconductors is increased by adding an appropriate amount of suitable…

Q: Draw the energy band diagrams, showing Ec, Ev, EF, and Et, for the following; assum ing all…

Q: Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity?…

A: Given T=300 K Boron is an acceptor type impurity so, NA=4×1018 /cm3ND≈0 /cm3 For p -type…

Q: 5. In a P-type germanium, nį = 2.1 × 1019 m-³density of boran 4.5 x 1023 atoms /m³. The electron and…

A: (a) Calculate the conductivity before the addition of boron atoms.…

Q: Find the kinetic energy of electrons in the conduction band of a nondegenerate n-type semiconductor…

Q: Silicon is doped with 1.2 10 16 B/cm3 Assume all dopants are ionized at 300K. Find the Fermi energy…

Q: 1. Calculate position of Fermi level in n-type silicon with donor concentration of 3x1017 cm-³ at a…

A: Brief description : Generally semiconductors are divided as two types 1.Intrinsic semiconductors…

Q: Consider a material where the probability of a hole occupying a state in the middle of the valence…

Q: Consider a silicon crystal at 27° C doped with atoms at a concentration of Na = 10" cm 1- Calculate…

A: Here this is n type si semiconductor. I have found the value of conductivity and the difference of…

Q: A silicon sample at room temperature is doped with gallium (Ga) from one side such that…

A: Given Ndoping=38.85x1015e−x/α α = 0.5 µm, and Ndoping >> ni. Electric field at x= 1µm. E=…

Q: Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3…

A: Given: since silicon is doped with boron i.e Trivalent impurity. Therefore it is a P-Type…

Q: A gallium arsenide semiconductor at T = 300 K is doped with impurity concentration N = The mobility…

A: The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

Q: The electron number density in a semiconductor varies from 1020 m-3 to 1012 m-3 linearly over a…

A: Given data, μе = 0.135 m2V-1s-1 , The temperature(T) is 300 K. The distance(x) is 4μm

Q: 3.3 For a silicon crystal doped with boron, what must N be if at T 300 K the electron concentration…

A: The solution can be achieved as follows.

Q: In a certain semiconductor, the Fermi energy lies above the top of the valence band by an amount…

A: Given, In a certain semiconductor, the Fermi energy lies above the top of the valence band by an…

Q: In a semiconductor, an energy gap concept is used to show the difference between …… .. Please choose…

A: Eg = Energy gap . Eg = EC -EV EC = conduction energy band level EV = valence energy band…

Q: The Fermi level of the P-Type semiconductor is located at O a. none of the other answers O b. The…

A: The Fermi level of the P-type semiconductor is located at....

Q: At 300 K temperature, for a Si diode, the forward current is found to be 1 mA. If the forward…

A: Under forward bias condition, the expression of the diode current for a Silicon diode is given as

Q: Consider a silicon crystal at 300° K doped with arsenic atoms. Depending on the following figure,…

A: We can redraw the above band diagram as Here For silicon material,NC=2.8×1019 cm-3…

Concept explainers

Methods of Wiring

Electrical wiring is the way of integrating cables and wires to interconnected equipment such as fuses, switches, sockets, lights, fans, and so on to the main distribution board, which is a specific structure attached to the utility pole that ensures a constant power supply.

Question

Please give me explain clearly

The hole concentration in a germanium semiconductor at T = 300 K is po = 2 X 1016 cm3
a) Determine the position of the Fermi level with respect to the valence band energy level
b) Determine the electron concentration
c) Is the material n-type or p-type?

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 2 steps with 1 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

What is CEMF?
How is a solid-state diode tested? Explain.
(A) compute the concentration of electrons and hole in an intrinsic sample of Si at room temperature you may take me = 0.7 mo and mh = mo (b) Determine the position of fermi level under these condition ?
In a certain semiconductor, the Fermi energy lies above the top of the valence band by an amount equal to 3 4 of the band gap. Find the probability that a state at the bottom of the conduction band is occupied if the band gap is 0.300 eV and the temperature is 275K.
If the Fermi level in impure silicon is 0.4 eV above the center of the gap at a temperature of 300 K, where Eg = 1.1 eV and * ni = 1.45 x 1016 / m, what kind of impurities are there and what is their concentration?
An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?
SEMICONDUCTOR DEVICES n-type silicon sample with a donor impurity concentration of 2x1015 cm–3 is converted into p-type by gallium (Ga) diffusion so that resistivity at T= 80 °C is (100/48) Ω.cm. µp (80 °C) =300 cm2/V.s, µn (80 °C) =900 cm2/V.s and ni (80 °C) = 3x1011 cm–3. Calculate the hole concentration after converting into p-type?
An n-type semiconductor sample has an electron density of 6.25 x 10 ^ 18 / cm ^ 3 at 300K. If the concentration of the carriers in this example is 2.5 x 10 ^ 13 / cm ^ 3, what is the hole density at this temperature?
A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
An n-type semiconductor with direct band structure (Eg = 2.5 eV) is applied with a DC voltage shown below. (i) Schematically draw the band diagram for this semiconductor under this DC voltage. (ii) Calculate the longest wavelength in light absorption from this n-type semiconductor with applied DC voltage.
A current density of 5000 A/cm2 exists in a 0.02 Ω · cm n-type silicon sample. What is the electric ﬁeld needed to support this drift current density?
A silicon semiconductor material at T = 300 K is doped with arsenic atoms to a concentration of 2*10 ^15 cm -3 and with boron atoms to a concentration of 1.2*10 ^15 cm -3 . (a) Is the material n type or p type? (b) Determine n0 and p0 . (c) Additional boron atoms are to be added such that the hole concentration is 4*10 15 cm -3 . What concentration of boron atoms must be added and what is the new value of n0? Please answer in typing format