Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', 1000 cm/V-sec. ,- 500 cmV-sec. Tuo 2 10's. To-1x10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-lh pair of 2 10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is . .HA/em. (use kT-0.025eV at 300K) a)43 b)62 c) 93 d) 185 e) 280

Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', 1000 cm/V-sec. ,- 500 cmV-sec. Tuo 2 10's. To-1x10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-lh pair of 2 10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is . .HA/em. (use kT-0.025eV at 300K) a)43 b)62 c) 93 d) 185 e) 280

Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter2: Electrical Components And Circuits

Section: Chapter Questions

Problem 2.10QAP

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