5) Germanium doped with 1024 m3 Al atoms is a semi-conductor at room temperature andeach Al atom creates a charge carrier.a) Is the material obtained a p-type or an n-type semiconductor?b) Calculate the electrical conductivity of this material at room temperature, consideringthat the electron and hole mobilities are respectively 0.1 and 0.05 m?/V.s.

a) aluminium is a trivalent impurities.so when Ge doped with aluminium makes the semiconductor is a…

5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Caleulate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.

5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. a) Is the material obtained a p-type or an n-type semiconductor? b) Caleulate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m²/V.s.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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