Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi energy is 0.25 eV above the valence band energy. The value of N-1.04x1019 cm-3 at T=300K.
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A: Given-Eg=1.1 eVNC=2.8×1019cm-3=2.8×1025 m-3Nv=1×1019cm-3=1×1025 m-3n0=1011 cm-3=1017m-3…
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Q: Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi…
A: According to question --- Given data-- T = 375 K. fermi energy E f = 0.25 eV above the valence band…
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- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.
- Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).For silicon at T = 300 K, calculate the equilibrium electron concentration in cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.Calculate the conductivity of an intrinsic silicon at room temperature. If ten electrons out of 1010 electrons in Valence Band move to Conduction Band. Given the silicon density is (2.33×10 Kg/m³), the silicon atomie weight is (28.086), the electrons mobility is (0.15 m/V.sec.), and the holes mobility is (0.05 m2/V.sec.).
- Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meVInert concentration in germanium semiconductor material at T=400K(x10^14 per cm^3)?determine the saturation current in a p-n junction diode at 256 K if a voltage of 0.0678 V produces a positive current of 36.6 mA. (a) 3.83 mA (b) 1.62 mA (C) 1.78 mA (d) 6.03 mA
- What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.Why is the reverse current in a silicon diode much smaller than that in a comparable germanium diode?Consider a p+-n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.