Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 10 cmdonor doping concentrations of 10 cm,andCalculate the width of the space charge region in the pn junction when a reverse biased voltageof 5 V is applied.Note/ n, = 1.5 x 10t0 cmE = 1.035 x 101F/cm

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Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 10 cm and donor doping concentrations of 10"cm. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n, = 1.5 x 101 cm E = 1.035 x 10-"F/cm

Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 10 cm and donor doping concentrations of 10"cm. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n, = 1.5 x 101 cm E = 1.035 x 10-"F/cm

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 13PP

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Question

Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 10 cm
donor doping concentrations of 10 cm,
and
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/ n, = 1.5 x 10t0 cm
E = 1.035 x 101F/cm

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